Datasheet MMBT4403 (ON Semiconductor) - 6

ManufacturerON Semiconductor
DescriptionPNP General Purpose Amplifier
Pages / Page11 / 6 — 2 N 4403 / MMBT4403 — PNP Ge. Typical Performance Characteristics. I c. I …
File Format / SizePDF / 562 Kb
Document LanguageEnglish

2 N 4403 / MMBT4403 — PNP Ge. Typical Performance Characteristics. I c. I = I =. V = 15 V. (nS. off. neral-Purpose Amplifier

2 N 4403 / MMBT4403 — PNP Ge Typical Performance Characteristics I c I = I = V = 15 V (nS off neral-Purpose Amplifier

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2 N 4403 / MMBT4403 — PNP Ge Typical Performance Characteristics
(Continued) 250 500
I c I I = I = c B1 B2 I = I = 10 B1 B2 10
200 400
V = 15 V cc V = 15 V cc ) t )
150
s
300
(nS (nS E E M
100
M TI
200
TI t t f r t off
50 100
t t d on neral-Purpose Amplifier
0 0 10 100 1000 10 100 1000
I - COLLECTOR CURRENT (mA) C I - COLLECTOR CURRENT (mA) C Figure 9. Switching Times vs. Collector Current Figure 10. Turn-On and Turn-Off Times vs. Collector Current ) A
50 1
(m ) W ENT
20
N (
0.75
SOT-223 RR IO T TO-92 CU
10
A E t = 15 V r IP S ISS
0.5 5
SOT-23 N BA R D 30 ns E W RN 0 O
2 0.25
60 ns - P - TU D P B1
1
I
10 100 500 0 0 25 50 75 100 125 150
I - COLLECTOR CURRENT (mA) C TEMPERATURE ( oC) Figure 11. Rise Time vs. Figure 12. Power Dissipation vs. Collector and Turn-On Base Currents Ambient Temperature A V m 0 0
5
1
1.3
- -1 hoe h = = re CE C V h ie T
1.2 2
h re an d h AT I hre A oe h fe S hoe E h ES U fe U L
1
L
1.1
A A V V O O T
0.5
h ie T
1
IVE IVE T T h ie A A L
0.2
V = -10 V
0.9
I = -10mA CE C o o . RE T = 25 C h T = 25 C A . REL fe A AR
0.1
AR
0.8 1 2
_ _
5
_
10
_ _
20 50
_ H CH C
-4 -8 -12 -16 -20
I - C COLLECTOR CURRENT (mA) V - CE COLLECTOR VOLTAGE (V) Figure 13. Common Emitter Characteristics Figure 14. Common Emitter Characteristics
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