Datasheet MTP20N20E (ON Semiconductor) - 7

ManufacturerON Semiconductor
DescriptionPower MOSFET 20 Amps, 200 Volts
Pages / Page9 / 7 — MTP20N20E. SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. …
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MTP20N20E. SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. Maximum Avalanche Energy versus

MTP20N20E SAFE OPERATING AREA Figure 11 Maximum Rated Forward Biased Figure 12 Maximum Avalanche Energy versus

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MTP20N20E SAFE OPERATING AREA
100 600 VGS = 20 V ID = 20 A SINGLE PULSE 500 T O−SOURCE (mJ) 10 C = 25°C 10µs (AMPS) 400 100µs 1.0 1ms 300 10ms dc AVALANCHE ENERGY 200 , DRAIN CURRENT 0.1 I D RDS(on) LIMIT , SINGLE PULSE DRAIN−T THERMAL LIMIT E AS 100 PACKAGE LIMIT 0.01 0 0.1 1.0 10 100 1000 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1.0 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 RθJC(t) = r(t) RθJC 0.05 THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE t1 READ TIME AT t1 0.01 r(t) t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t, TIME (ms)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6