Datasheet LM4051 (Analog Devices) - 4

ManufacturerAnalog Devices
Description50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages
Pages / Page14 / 4 — LM4050/LM4051. Electrical Characteristics—2.500V. PARAMETER. SYMBOL. …
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LM4050/LM4051. Electrical Characteristics—2.500V. PARAMETER. SYMBOL. CONDITIONS. MIN. TYP. MAX. UNITS

LM4050/LM4051 Electrical Characteristics—2.500V PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

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LM4050/LM4051
50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages
Electrical Characteristics—2.500V
(IR = 100µA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LM4050A (0.1%) 2.4975 2.5000 2.5025 Reverse Breakdown Voltage VR TA = +25°C LM4050B (0.2%) 2.4950 2.5000 2.5050 V LM4050C (0.5%) 2.4875 2.5000 2.5125 LM4050A ±2.5 ±15 Reverse Breakdown Voltage Tolerance (Note 3) VRTOL LM4050B ±5.0 ±18 mV LM4050C ±13 ±25 Minimum Operating Current IRMIN 45 65 µA Average Reverse Voltage IR = 10mA ±20 Temperature Coefficient DVR/DT IR = 1mA ±15 ±50 ppm/°C (Notes 3, 4) IR = 100µA ±15 Reverse Breakdown Voltage IRMIN ≤ IR ≤ 1mA 0.3 1.0 Change with Operating mV Current Change 1mA ≤ IR ≤ 15mA 2.5 8.0 Reverse Dynamic IR = 1mA, f = 120Hz, LM4050A/B 0.3 0.8 Impedance (Note 4) ZR I Ω AC = 0.1IR LM4050C 0.3 0.9 Wideband Noise eN IR = 100µA, 10Hz ≤ f ≤ 10kHz 35 µVRMS Reverse Breakdown Voltage Long-Term Stability DVR T = 1000h 120 ppm www.analog.com Analog Devices │ 4