Datasheet DMP3099L (Diodes) - 4

ManufacturerDiodes
DescriptionP-CHANNEL ENHANCEMENT MODE MOSFET
Pages / Page7 / 4 — DMP3099L. www.diodes.com
File Format / SizePDF / 417 Kb
Document LanguageEnglish

DMP3099L. www.diodes.com

DMP3099L www.diodes.com

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DMP3099L
20.0 20 V = -10V GS T = 85°C A V = -5.0V DS T = 150°C A T = 25°C A 16.0 V = -4.0V GS V = -4.5V ) 16 T = 125°C A ) GS T (A T = -55°C A T (A N N E E 12.0 R 12 R R R U U C C IN IN A A 8.0 R 8 R , D , D V = -3.0V GS D -I I D 4.0 4 V = -2.5V GS V = -2.0V GS 0.0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 V , DRAIN-SOURCE VOLTAGE (V) -V , GATE-SOURCE VOLTAGE (V) DS GS Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics ) 1 ) 0.4 Ω V = -4.5V (Ω ( GS E E C C 0.35 N N TA TA IS IS 0.3 S S E E T = 150°C A -R -R 0.25 N N O O E E T = 125°C A C 0.1 V = -4.5V 0.2 GS C R R U U O O 0.15 T = 85°C A -S -S IN IN A V = -10V GS A R R 0.1 T = 25°C , D , D A ) N N 0.05 (O S(O S D R D R T = -55°C A 0.01 0 0 4 8 12 16 20 0 4 8 12 16 20 I , DRAIN-SOURCE CURRENT (A) D -I , DRAIN CURRENT (A) D Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs. Drain Current and Gate Voltage Drain Current and Temperature 2 ) 0.16 Ω 1.8 ( V = -10V E 0.14 ) GS C D 1.6 I = -5.3A D N TA E 0.12 C LIZE 1.4 IS S R A E U M V = 4. 5V GS O R 1.2 -R 0.1 N I = 4.2A D -S O V = -4.5V GS O IN (N I = -4.2A E A E 1 D C 0.08 R C R D N , 0.8 U ) O 0.06 N TA V = 10V (O IS -S GS S S 0.6 IN I = 5.3A D R D E A 0.04 -R R N 0.4 O , D )N 0.2 0.02 (O S D 0 R 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( C) A ° T , JUNCTION TEMPERATURE ( C) J ° Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature DMP3099L 4 of 7 July 2021 Document number: DS36081 Rev. 4 - 2
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