Datasheet AO3401 (Alpha & Omega) - 2

AO3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV I DSS Drain-Source Breakdown Voltage D=-250mA, VGS=0V -30 V VDS=-30V, VGS=0V -1 I Zero Gate Voltage Drain Current m DSS A TJ=55°C -5 I Gate-Body leakage current V GSS DS=0V, VGS= ±12V ±100 nA V V GS(th) Gate Threshold Voltage DS=VGS ID=-250mA -0.5 -0.9 -1.3 V I V D(ON) On state drain current GS=-10V, VDS=5V -27 A VGS=-10V, ID=-4.0A 41 50 mW TJ=125°C 62 75 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.7A 47 60 mW VGS=-2.5V, ID=-2A 60 85 mW g V FS Forward Transconductance DS=-5V, ID=-4.0A 17 S V I SD Diode Forward Voltage S=1A,VGS=0V -0.7 -1 V IS Maximum Body-Diode Continuous Current -2 A ISM Pulsed Body-Diode CurrentB -27 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 645 pF C Output Capacitance V oss GS=0V, VDS=-15V, f=1MHz 80 pF Crss Reverse Transfer Capacitance 55 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 4 7.8 12 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 14 nC Qg(4.5V) Total Gate Charge 7 nC VGS=-10V, VDS=-15V, ID=-4.0A Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time V 3.5 ns GS=-10V, VDS=-15V, RL=3.75W, t Turn-Off DelayTime R D(off) GEN=3W 41 ns tf Turn-Off Fall Time 9 ns trr Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/ms 11 ns Qrr Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/ms 3.5 nC A. The value of Rq is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The JA A value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤ 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25°C. J D. The Rq is the sum of the thermal impedence from junction to lead R and lead to ambient. JA qJL E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev 6.1: February 2024
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