Datasheet BLF881 (Ampleon) - 6
| Manufacturer | Ampleon |
| Description | UHF power LDMOS transistor |
| Pages / Page | 18 / 6 — BLF881; BLF881S. UHF power LDMOS transistor. 7.1.3 DVB-T. Fig 5. DVB-T … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
BLF881; BLF881S. UHF power LDMOS transistor. 7.1.3 DVB-T. Fig 5. DVB-T power gain and drain efficiency as. Fig 6
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BLF881; BLF881S UHF power LDMOS transistor 7.1.3 DVB-T
001aal078 001aal079 23 70 0 Gp ηD IMD (dB) (%) shldr 22 Gp 60 (dBc) −10 21 50 −20 20 40 ηD 19 30 −30 18 20 −40 (1) 17 10 (2) 16 0 −50 0 30 60 90 0 30 60 90 PL(AV) (W) PL(AV) (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. narrowband 860 MHz test circuit. (1) Lower adjacent channel (2) Upper adjacent channel
Fig 5. DVB-T power gain and drain efficiency as Fig 6. DVB-T shoulder distance as a function of function of average load power; typical values average load power; typical values
BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 6 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
001aal078 001aal079 23 70 0 Gp ηD IMD (dB) (%) shldr 22 Gp 60 (dBc) −10 21 50 −20 20 40 ηD 19 30 −30 18 20 −40 (1) 17 10 (2) 16 0 −50 0 30 60 90 0 30 60 90 PL(AV) (W) PL(AV) (W) VDS = 50 V; IDq = 0.5 A; measured in a common-source VDS = 50 V; IDq = 0.5 A; measured in a common-source narrowband 860 MHz test circuit. narrowband 860 MHz test circuit. (1) Lower adjacent channel (2) Upper adjacent channel
Fig 5. DVB-T power gain and drain efficiency as Fig 6. DVB-T shoulder distance as a function of function of average load power; typical values average load power; typical values
BLF881_BLF881S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet Rev. 4 — 1 September 2015 6 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
