Datasheet IGC033S101 (Infineon) - 3
| Manufacturer | Infineon |
| Description | The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs |
| Pages / Page | 18 / 3 — Public. IGC033S101. 1 Maximum ratings. Table 2 Maximum ratings |
| Revision | 01_00 |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
Public. IGC033S101. 1 Maximum ratings. Table 2 Maximum ratings
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Public
CoolGaNT MTransistor 100 V G3
IGC033S101 1 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Stresses beyond max ratings may cause permanent damage to the device. For optimum lifetime and reliability, Infineon recommends operating conditions that do not continuously exceed 80 % of the maximum ratings stated (unless otherwise explicitly stated). For further information, contact your local Infineon sales office.
Table 2 Maximum ratings
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Continuous drain‑source voltage VDS ‑ ‑ 100 V VGS=0 V Pulsed drain‑source voltage 1) VDS, pulse ‑ ‑ 120 V VGS=0 V, 1 h total time 76 VGS=5 V, TC=25 °C Continuous drain current ID ‑ ‑ A 21 VGS=5 V, TA=25 °C, RthJA=38 °C/W 2) 700 Tj=25 °C Pulsed drain current 3) ID,pulse ‑ ‑ A 330 Tj=150 °C Pulsed gate‑source voltage 1) VGS ‑6.5 ‑ 6.5 V Pulsed 100 h total time 45 TC=25 °C Power dissipation Ptot ‑ ‑ W 3.3 TA=25 °C, RthJA=38 °C/W 2) Storage temperature Tstg ‑55 ‑ 150 °C ‑ Junction temperature Tj ‑40 1) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation. 2) Device on 4‑layer FR4 PCB, vertical in still air. 3) Pulse current limited by transfer characteristic. Datasheet Revision 1.2 https://www.infineon.com 3 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
Public
CoolGaNT MTransistor 100 V G3
IGC033S101 1 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Stresses beyond max ratings may cause permanent damage to the device. For optimum lifetime and reliability, Infineon recommends operating conditions that do not continuously exceed 80 % of the maximum ratings stated (unless otherwise explicitly stated). For further information, contact your local Infineon sales office.
Table 2 Maximum ratings
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Continuous drain‑source voltage VDS ‑ ‑ 100 V VGS=0 V Pulsed drain‑source voltage 1) VDS, pulse ‑ ‑ 120 V VGS=0 V, 1 h total time 76 VGS=5 V, TC=25 °C Continuous drain current ID ‑ ‑ A 21 VGS=5 V, TA=25 °C, RthJA=38 °C/W 2) 700 Tj=25 °C Pulsed drain current 3) ID,pulse ‑ ‑ A 330 Tj=150 °C Pulsed gate‑source voltage 1) VGS ‑6.5 ‑ 6.5 V Pulsed 100 h total time 45 TC=25 °C Power dissipation Ptot ‑ ‑ W 3.3 TA=25 °C, RthJA=38 °C/W 2) Storage temperature Tstg ‑55 ‑ 150 °C ‑ Junction temperature Tj ‑40 1) Provided as measure of robustness under abnormal operating conditions and not recommended for normal operation. 2) Device on 4‑layer FR4 PCB, vertical in still air. 3) Pulse current limited by transfer characteristic. Datasheet Revision 1.2 https://www.infineon.com 3 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
