Datasheet IGB110S101 (Infineon) - 10
| Manufacturer | Infineon |
| Description | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| Pages / Page | 18 / 10 — Public. IGB110S101. DS(on). D [A]. GS [V]. °C) 25 to. [V]. alized. … |
| Revision | 01_00 |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
Public. IGB110S101. DS(on). D [A]. GS [V]. °C) 25 to. [V]. alized. GS(th). (norm. j [°C]
Model Line for this Datasheet
Text Version of Document
Public
CoolGaNT MTransistor 100 V G3
IGB110S101
Diagram 9: Typ. drain‑source on‑state resistance Diagram 10: Typ. Drain‑source on‑state resistance 20 40 18 3.6 V 35 16 4 V 30 14
]
150 °C 12
]
25
[m
4.5 V
[m
10 5 V 20 8
R DS(on) R DS(on)
15 6 10 25 °C 4 2 5 0 0 0 20 40 60 80 100 0 1 2 3 4 5
I D [A] V GS [V]
RDS(on)=f(I ); D Tj=25 °C; parameter: VGS RDS(on)=f(VGS); I =10 A; parameter: D Tj Diagram 11: Drain‑source on‑state resistance Diagram 12: Typ. gate threshold voltage 2.5 5.0 2.0 4.0
°C) 25 to
1.5 3.0
[V] alized
1.0
V GS(th)
2.0 3.0 mA
(norm
1.5 mA
R DS(on)
0.5 1.0 0.0 0.0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
T j [°C] T j [°C]
RDS(on)=f(Tj); I =10 A, D VGS=5V VGS(th=f(Tj), VGS=VDS; parameter: ID Datasheet Revision 1.1 https://www.infineon.com 10 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
CoolGaNT MTransistor 100 V G3
IGB110S101
Diagram 9: Typ. drain‑source on‑state resistance Diagram 10: Typ. Drain‑source on‑state resistance 20 40 18 3.6 V 35 16 4 V 30 14
]
150 °C 12
]
25
[m
4.5 V
[m
10 5 V 20 8
R DS(on) R DS(on)
15 6 10 25 °C 4 2 5 0 0 0 20 40 60 80 100 0 1 2 3 4 5
I D [A] V GS [V]
RDS(on)=f(I ); D Tj=25 °C; parameter: VGS RDS(on)=f(VGS); I =10 A; parameter: D Tj Diagram 11: Drain‑source on‑state resistance Diagram 12: Typ. gate threshold voltage 2.5 5.0 2.0 4.0
°C) 25 to
1.5 3.0
[V] alized
1.0
V GS(th)
2.0 3.0 mA
(norm
1.5 mA
R DS(on)
0.5 1.0 0.0 0.0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
T j [°C] T j [°C]
RDS(on)=f(Tj); I =10 A, D VGS=5V VGS(th=f(Tj), VGS=VDS; parameter: ID Datasheet Revision 1.1 https://www.infineon.com 10 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
