Datasheet KSD1691 (Fairchild)
| Manufacturer | Fairchild |
| Description | NPN Epitaxial Silicon Transistor |
| Pages / Page | 5 / 1 — KSD169. KSD1691. Feature. NPN Epitaxial Silicon Transistor. Absolute … |
| File Format / Size | PDF / 61 Kb |
| Document Language | English |
KSD169. KSD1691. Feature. NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings. Symbol. Parameter. Value. Units
Model Line for this Datasheet
Text Version of Document
KSD169 1 KSD1691 Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151 1 TO-126 1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 8 A IB Base Current (DC) 1 A PC Collector Dissipation (Ta=25°C) 1.3 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, duty Cycle≤50%
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = 50V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA hFE1 *DC Current Gain VCE = 1V, IC = 0.1A 60 hFE2 VCE = 1V, IC = 2A 100 400 hFE3 VCE = 1V, IC = 5A 50 VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.1 0.3 V VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.9 1.2 V tON Turn ON Time VCC = 10V, IC = 2A 0.2 1 µs I t B1 = - IB2 = 0.2A STG Storage Time 1.1 2.5 µs RL = 5Ω tF Fall Time 0.2 1 µs * Pulse test: PW≤50µs, duty Cycle≤2% Pulsed
hFE Classificntion
Classification O Y G hFE 2 100 ~ 200 160 ~ 320 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000
• Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151 1 TO-126 1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 8 A IB Base Current (DC) 1 A PC Collector Dissipation (Ta=25°C) 1.3 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, duty Cycle≤50%
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = 50V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA hFE1 *DC Current Gain VCE = 1V, IC = 0.1A 60 hFE2 VCE = 1V, IC = 2A 100 400 hFE3 VCE = 1V, IC = 5A 50 VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.1 0.3 V VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.9 1.2 V tON Turn ON Time VCC = 10V, IC = 2A 0.2 1 µs I t B1 = - IB2 = 0.2A STG Storage Time 1.1 2.5 µs RL = 5Ω tF Fall Time 0.2 1 µs * Pulse test: PW≤50µs, duty Cycle≤2% Pulsed
hFE Classificntion
Classification O Y G hFE 2 100 ~ 200 160 ~ 320 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000
