Preliminary Datasheet EPC2103 (Efficient Power Conversion)
| Manufacturer | Efficient Power Conversion |
| Description | Enhancement-Mode GaN Power Transistor Half Bridge |
| Pages / Page | 10 / 1 — EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. Features:. Applications:
Model Line for this Datasheet
EPC2103
Text Version of Document
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet Features:
• Greater than 97% System Efficiency at 20 A o 48 VIN to 12 VOUT, 500 kHz o Includes driver, inductor, and output filter • High Frequency Operation • High Density Footprint EPC2103 devices are supplied only in • Low Inductance Package passivated die form with solder balls • Pb-Free (RoHS Compliant), Halogen Free Die Size: 6.05 mm x 2.3 mm
Applications:
• High Frequency DC-DC Conversion
Typical System Efficiency 98.5 98 Typical Circuit 97.5 ) 97 (% y c 96.5 n e ci 96 Effi f 95.5 sw=300 kHz fsw=500 kHz 95 94.5 94 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Output Current (A) VIN = 48 V, VOUT = 12 V MAXIMUM RATINGS Parameter Value
Maximum Drain – Source Voltage (VSW to PGND, VIN to VSW) 80 V Maximum Gate – Source Voltage Range (Gate 1 to VSW, Gate 2 to PGND) -4 V < VGS < 6 V Q1 Control FET 23 A Continuous Drain Current, 25 °C, RθJA = 22 (Q1), 22 (Q2) Q2 Sync FET 23 A Q1 Control FET 195 A Maximum Pulsed Drain Current, 25 °C, Tpulse = 300 µs Q2 Sync FET 195 A Optimum Temperature Range -40 °C < TJ < 150 °C Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 1
• Greater than 97% System Efficiency at 20 A o 48 VIN to 12 VOUT, 500 kHz o Includes driver, inductor, and output filter • High Frequency Operation • High Density Footprint EPC2103 devices are supplied only in • Low Inductance Package passivated die form with solder balls • Pb-Free (RoHS Compliant), Halogen Free Die Size: 6.05 mm x 2.3 mm
Applications:
• High Frequency DC-DC Conversion
Typical System Efficiency 98.5 98 Typical Circuit 97.5 ) 97 (% y c 96.5 n e ci 96 Effi f 95.5 sw=300 kHz fsw=500 kHz 95 94.5 94 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Output Current (A) VIN = 48 V, VOUT = 12 V MAXIMUM RATINGS Parameter Value
Maximum Drain – Source Voltage (VSW to PGND, VIN to VSW) 80 V Maximum Gate – Source Voltage Range (Gate 1 to VSW, Gate 2 to PGND) -4 V < VGS < 6 V Q1 Control FET 23 A Continuous Drain Current, 25 °C, RθJA = 22 (Q1), 22 (Q2) Q2 Sync FET 23 A Q1 Control FET 195 A Maximum Pulsed Drain Current, 25 °C, Tpulse = 300 µs Q2 Sync FET 195 A Optimum Temperature Range -40 °C < TJ < 150 °C Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 1
