Datasheet IRF5305 - 7
| Description | HEXFET Power MOSFET |
| Pages / Page | 9 / 7 — Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14 |
| File Format / Size | PDF / 133 Kb |
| Document Language | English |
Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14
Text Version of Document
IRF5305
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T
• Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - ** RG • dv/dt controlled by R + G • * ISD controlled by Duty Factor "D" V - DD • D.U.T. - Device Under Test VGS* * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = P.W. Period V [ GS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt V [ DD ] Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For P-Channel HEXFETS www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T
• Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - ** RG • dv/dt controlled by R + G • * ISD controlled by Duty Factor "D" V - DD • D.U.T. - Device Under Test VGS* * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = P.W. Period V [ GS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt V [ DD ] Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For P-Channel HEXFETS www.irf.com 7
