Datasheet 2N5486 (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | JFET VHF/UHF Amplifiers |
| Pages / Page | 6 / 1 — N−Channel — Depletion. Features. http://onsemi.com. MAXIMUM RATINGS. … |
| File Format / Size | PDF / 150 Kb |
| Document Language | English |
N−Channel — Depletion. Features. http://onsemi.com. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. TO−92 (TO−226AA). CASE 29−11. STYLE 5
Text Version of Document
2N5486 JFET VHF/UHF Amplifiers
N−Channel — Depletion Features
• Pb−Free Packages are Available*
http://onsemi.com
1 DRAIN
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
3 Drain −Gate Voltage V GATE DG 25 Vdc Reverse Gate −Source Voltage VGSR 25 Vdc Drain Current I 2 SOURCE D 30 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TC = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Operating and Storage Junction TJ, Tstg −65 to +150 °C Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum
TO−92 (TO−226AA)
Ratings are stress ratings only. Functional operation above the Recommended
CASE 29−11
Operating Conditions is not implied. Extended exposure to stresses above the
STYLE 5
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
2N 5486 AYWWG G 2N5486 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION Device Package Shipping
2N5486 TO−92 1000 Units / Bulk 2N5486G TO−92 1000 Units / Bulk (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2006 − Rev. 2 2N5486/D
N−Channel — Depletion Features
• Pb−Free Packages are Available*
http://onsemi.com
1 DRAIN
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
3 Drain −Gate Voltage V GATE DG 25 Vdc Reverse Gate −Source Voltage VGSR 25 Vdc Drain Current I 2 SOURCE D 30 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TC = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Operating and Storage Junction TJ, Tstg −65 to +150 °C Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum
TO−92 (TO−226AA)
Ratings are stress ratings only. Functional operation above the Recommended
CASE 29−11
Operating Conditions is not implied. Extended exposure to stresses above the
STYLE 5
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
2N 5486 AYWWG G 2N5486 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION Device Package Shipping
2N5486 TO−92 1000 Units / Bulk 2N5486G TO−92 1000 Units / Bulk (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2006 − Rev. 2 2N5486/D
