Datasheet BSC067N06LS3 G
| Description | OptiMOS 3 Power-Transistor |
| Pages / Page | 10 / 1 — BSC067N06LS3 G. OptiMOSTM3 Power-Transistor. Product Summary. Features. … |
| File Format / Size | PDF / 467 Kb |
| Document Language | English |
BSC067N06LS3 G. OptiMOSTM3 Power-Transistor. Product Summary. Features. Type. Package. Marking. Maximum ratings,. Parameter
Text Version of Document
Type
BSC067N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features
V 60 V DS • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters R 6.7 DS(on),max mW • Excellent gate charge x R I 50 A DS(on) product (FOM) D • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
BSC067N06LS3 G
Package
PG-TDSON-8
Marking
067N06LS
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D V GS=10 V, T C=25 °C 50 A V GS=10 V, T C=100 °C 50 V GS=4.5 V, T C=25 °C 50 V GS=4.5 V, 37 T C=100 °C V GS=10 V, T A=25 °C, 15 R thJA=50 K/W2) Pulsed drain current3) I D,pulse T C=25 °C 200 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 47 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.4 page 1 2013-09-18
BSC067N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features
V 60 V DS • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters R 6.7 DS(on),max mW • Excellent gate charge x R I 50 A DS(on) product (FOM) D • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
BSC067N06LS3 G
Package
PG-TDSON-8
Marking
067N06LS
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D V GS=10 V, T C=25 °C 50 A V GS=10 V, T C=100 °C 50 V GS=4.5 V, T C=25 °C 50 V GS=4.5 V, 37 T C=100 °C V GS=10 V, T A=25 °C, 15 R thJA=50 K/W2) Pulsed drain current3) I D,pulse T C=25 °C 200 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 47 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.4 page 1 2013-09-18
