Datasheets - Gate Drivers STMicroelectronics
Subsection: "Gate Drivers"
Manufacturer: "STMicroelectronics"
Manufacturers
Analog Devices Diodes Efficient Power Conversion GaNPower International Infineon International Rectifier IXYS Linear Technology Microchip Renesas STMicroelectronics Texas Instruments TRINAMICSeries
L99H92 MASTERGAN2 MASTERGAN4 STDRIVE101 STGAP2D STGAP2HD STGAP2HS STGAP2SICD STGAP2SICS STGAP3S6I STGAP3S6S STGAP3SXI STGAP3SXSSearch results: 13 Output: 1-13
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- Galvanically Isolated 6/10 A Single Gate Drivers With Protection Features The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
- Galvanically Isolated 6/10 A Single Gate Drivers With Protection Features The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
- Galvanically Isolated 6/10 A Single Gate Drivers With Protection Features The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
- Galvanically Isolated 6/10 A Single Gate Drivers With Protection Features The STGAP3S is a family of protected single gate drivers that provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
- H-Bridge Gate Driver for Automotive Applications The L99H92 is designed to drive 4 external N-channel MOSFET transistors in single H-bridge or dual independent half bridge configuration for DC-motor control in automotive applications. Two free ...
- Galvanically isolated 4 A dual gate driver All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @ 25 °C dV/dt transient immunity ±100 V/ns Overall input-output propagation delay: 75 ns Separate sink and source ...
- Galvanically isolated 4 A dual gate driver All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @ 25 °C dV/dt transient immunity ±100 V/ns Overall input-output propagation delay: 75 ns Separate sink and source ...
- High power density 600V half-bridge driver with two enhancement mode GaN HEMT All features 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R DS(ON) = 225 mΩ I DS(MAX) ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- High power density 600V Half bridge driver with two enhancement mode GaN HEMT The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The ...
- Triple half-bridge gate driver The STDRIVE101 is a low voltage gate driver suitable for driving three-phase brushless motors. It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs. Each driver has a current capability ...
- Galvanically isolated 4 A single gate driver The STGAP2HS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A ...
- Galvanically isolated 4 A half-bridge dual channel gate driver
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