Datasheets - Gate Drivers - 3
Subsection: "Gate Drivers"
Manufacturers
Analog Devices Diodes Efficient Power Conversion GaNPower International Infineon International Rectifier IXYS Linear Technology Microchip Renesas STMicroelectronics Texas Instruments TRINAMICSearch results: 1,444 Output: 41-60
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Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB8275F provides an input-to-output isolation of 3kV rms . With a propagation delay accuracy of +4/-6ns, the gate driver is optimized for fast-switching applications ...- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB8275F provides an input-to-output isolation of 3kV rms . With a propagation delay accuracy of +4/-6ns, the gate driver is optimized for fast-switching applications ...
- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB7275F provides an input-to-output isolation of 3kV rms . With a propagation delay accuracy of +4/-6ns, the device is optimized for fast-switching applications with ...
- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB7275F provides an input-to-output isolation of 3kV rms . With a propagation delay accuracy of +4/-6ns, the device is optimized for fast-switching applications with ...
- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB family of single-channel gate-driver ICs provides an input-to-output isolation of 3kV rms . With +4/-6ns propagation delay accuracy the gate driver family is ...
- Single-channel isolated gate-driver IC in 150 mil DSO-8 package The EiceDRIVER 1EDB family of single-channel gate-driver ICs provides an input-to-output isolation of 3kV rms . With +4/-6ns propagation delay accuracy the gate driver family is ...
- High power density 600V half-bridge driver with two enhancement mode GaN HEMT All features 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R DS(ON) = 225 mΩ I DS(MAX) ...
- High power density 600V half-bridge driver with two enhancement mode GaN HEMT All features 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R DS(ON) = 225 mΩ I DS(MAX) ...
- High power density 600V half-bridge driver with two enhancement mode GaN HEMT All features 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R DS(ON) = 225 mΩ I DS(MAX) ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- Galvanically isolated 4 A single gate driver for SiC MOSFETs All features High voltage rail up to 1200 V Driver current capability: 4 A sink/source @25°C dV/dt transient immunity ±100 V/ns in full temperature range Overall input-output propagation ...
- High power density 600V Half bridge driver with two enhancement mode GaN HEMT The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The ...
- High power density 600V Half bridge driver with two enhancement mode GaN HEMT The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The ...
- High power density 600V Half bridge driver with two enhancement mode GaN HEMT The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration. The ...
24 V dual-channel low-side gate driver with high current for driving large power switches EiceDRIVER 24 V dual-channel low-side non-inverting gate driver for MOSFETs or IGBTs with typical 10 A source and sink currents in a DSO-8 package with ...- 24 V dual-channel low-side gate driver with high current for driving large power switches EiceDRIVER 24 V dual-channel low-side non-inverting gate driver for MOSFETs or IGBTs with typical 10 A source and sink currents in a DSO-8 package with ...
- 200 V high-side and low-side gate driver IC 200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.
