Datasheets

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  1. Datasheet Diodes SBRFP8A60P5Q-13
    8A Field Plated SBR Field Plated Super Barrier Rectifier in PowerDI-5 package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
  2. Datasheet Diodes SBRFP3M60SAFQ-13
    3A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
  1. Datasheet Diodes SBRFP2M60SAFQ-13
    2A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
  2. Datasheet Diodes SBRFP2M60P1Q-7
    2A Field Plated SBR Field Plated Super Barrier Rectifier in PowerDI123 package This Super Barrier Rectifier (SBR ) diode is ideally suited for applications requiring ultra-low blocking mode. Leading to lower operation temperatures and increased ...
  3. Datasheet Fujitsu RA-1.5W-K
    Miniature Relay 2 Poles-1 to 2 A for Signal Switching
  4. Datasheet JX Semiconductor JX4S0040R065M
    650V N-Channel MOSFET in TO247-4 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
  5. Datasheet JX Semiconductor JX3S0040065M
    650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
  6. Datasheet JX Semiconductor JX0320R065MT3
    650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
  7. Datasheet Ampleon CLF09H4LS800PU
    800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...
  8. Datasheet Toshiba TB67S531FTG(O,EL)
    BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC in 32-VQFN (5x5) package
  9. Datasheet Taiwan Semiconductor MBR30150CT
    30A, 150V, Automotive Planar Schottky in TO-220AB package
  10. Datasheet Taiwan Semiconductor MBR30100CT
    30A, 100V, Automotive Planar Schottky in TO-220AB package
  11. Datasheet Taiwan Semiconductor MBR3090CT
    30A, 90V, Automotive Planar Schottky in TO-220AB package
  12. Datasheet Taiwan Semiconductor MBR3050CT
    30A, 50V, Automotive Planar Schottky in TO-220AB package
  13. Datasheet Taiwan Semiconductor MBR3045CT
    30A, 45V, Automotive Planar Schottky in TO-220AB package
  14. Datasheet Taiwan Semiconductor MBR3035CT
    30A, 35V, Automotive Planar Schottky in TO-220AB package
  15. Datasheet Taiwan Semiconductor MBR3060CT
    30A, 60V, Automotive Planar Schottky in TO-220AB package
  16. Datasheet JX Semiconductor JX3S0040090M
    900V N-Channel SiC MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
  17. Datasheet Diodes PAM8408DR
    3W Stereo Differential Input Class D with Memory Up/Down Volume Control in SO-16L package Alternative Part: PAM8019E The PAM8408 is a filter-less Class-D amplifier with high SNR and differential input that helps eliminate noise. Advanced 32-step ...
  18. Datasheet Taiwan Semiconductor HER307G
    75ns, 3A, 800V, High Efficient Recovery Rectifier in DO-201AD package