8A Field Plated SBR Field Plated Super Barrier Rectifier in PowerDI-5 package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
3A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
2A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
2A Field Plated SBR Field Plated Super Barrier Rectifier in PowerDI123 package This Super Barrier Rectifier (SBR ) diode is ideally suited for applications requiring ultra-low blocking mode. Leading to lower operation temperatures and increased ...
650V N-Channel MOSFET in TO247-4 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...
900V N-Channel SiC MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
3W Stereo Differential Input Class D with Memory Up/Down Volume Control in SO-16L package Alternative Part: PAM8019E The PAM8408 is a filter-less Class-D amplifier with high SNR and differential input that helps eliminate noise. Advanced 32-step ...