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100V, 35 A ePower Stage IC Integrated high side and low side eGaN FETs with internal gate driver and level shifter Power Stage Load Current, 35 A Maximum Input Voltage, 100 V

100V, 35 A ePower Stage IC Integrated high side and low side eGaN FETs with internal gate driver and level shifter Power Stage Load Current, 35 A Maximum Input Voltage, 100 V

100V, 35 A ePower Stage IC Integrated high side and low side eGaN FETs with internal gate driver and level shifter Power Stage Load Current, 35 A Maximum Input Voltage, 100 V

100V, 35 A ePower Stage IC Integrated high side and low side eGaN FETs with internal gate driver and level shifter Power Stage Load Current, 35 A Maximum Input Voltage, 100 V

100V, 35 A ePower Stage IC Integrated high side and low side eGaN FETs with internal gate driver and level shifter Power Stage Load Current, 35 A Maximum Input Voltage, 100 V

Combining an accurate temperature sensor with a standard digital multimeter can make an inexpensive, accurate, and useful thermometer. A recent Design Idea, BJT is accurate sensor for absolute temperature in Kelvin and Rankine ( Ref. 1 ), was based ...

Simple math implemented in a (very) simple circuit. What’s not to like? A very cool (also warm!) property of the base-emitter junction of (most) small signal BJTs is the ΔV BE temperature-sensing effect. ΔV BE temperature ...

Ioan Ciascai is an academic researcher from Technical University of Cluj-Napoca. The author has contributed to research in topics: Pendulum Capacitive sensing. The author has an hindex of 5, co-authored 27 publications.

Septimiu Pop Phd associate professor at Technical University of Cluj-Napoca, Romania, Department of Applied Electronics.

Viman Liviu Marin (Member, IEEE) received the M.Sc. and Ph.D. degrees from the Technical University of Cluj-Napoca, Cluj-Napoca, Romania, in 1998 and 2009, respectively. He is currently a Associate professor with the Department of Applied ...