Datasheet GA200SA60UPBF - Vishay IGBT, SOT-227

Detailed Description

Manufacturer: Vishay

Description: IGBT, SOT-227

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Docket:
PD -50066A
GA200SA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
· UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode · Very low conduction and switching losses · Fully isolate package ( 2,500 Volt AC/RMS) · Very low internal inductance ( 5 nH typ.) · Industry standard outline

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 200 A
• Collector Emitter Voltage Vces: 1.6 V
• Power Dissipation Max: 500 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: ISOTOP
• Current Ic Continuous a Max: 200 A
• Current Temperature: 25°C
• Fall Time tf: 460 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 1
• Package / Case: ISOTOP
• Power Dissipation: 500 W
• Power Dissipation Pd: 500 W
• Pulsed Current Icm: 400 A
• Rise Time: 75 ns
• Termination Type: Screw
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Nettlefolds - MB04040010007FA
• SCHRODER - 13459