Datasheet GT20J101 - Toshiba IGBT, 600 V, TO-3P(N)

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(N)

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Docket:
GT20J101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm · · · · Third-generation IGBT Enhancement mode type High speed: tf = 0.30 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max)

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 20 A
• Collector Emitter Voltage Vces: 2.7 V
• Power Dissipation Max: 130 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-3P (N)
• Number of Pins: 3
• Current Ic Continuous a Max: 20 A
• Package / Case: TO-3P (N)
• Pin Format: GCE
• Power Dissipation: 130 W
• Power Dissipation Pd: 130 W
• Pulsed Current Icm: 40 A
• Rise Time: 12 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - TF 3 2
• Fischer Elektronik - WLK 5