Datasheet GT50J102 - Toshiba IGBT, 600 V, TO-3P(LH)

Detailed Description

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(LH)

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Docket:
GT50J102
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J102
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
l The 3rd.

Generation. l Enhancement-Mode. l High Speed. l Low Saturation Voltage. : tf = 0.30µs (Max.) : VCE(sat) = 2.7V (Max.) Unit: mm

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 50 A
• Collector Emitter Voltage Vces: 2.7 V
• Power Dissipation Max: 200 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-3P (LH)
• Current Ic Continuous a Max: 50 A
• Fall Time Typ: 150 ns
• Package / Case: TO-3P (LH)
• Power Dissipation: 200 W
• Power Dissipation Pd: 200 W
• Pulsed Current Icm: 100 A
• Rise Time: 120 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - TF 3 2
• Fischer Elektronik - WLK 5