Datasheet MMBT5089LT1G - ON Semiconductor BIPOLAR TRANSISTOR

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR

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Docket:
MMBT5088LT1G, MMBT5089LT1G Low Noise Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE Symbol MMBT5088 MMBT5089 MMBT5088 MMBT5089 VCEO Value 30 25 35 30 4.5 50 Unit Vdc 2 EMITTER
· These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Specifications:

• Collector Emitter Voltage V(br)ceo: 25 V
• Collector Emitter Voltage Vces: 400 V
• Current Ic Continuous a Max: 50 mA
• DC Collector Current: 50 mA
• DC Current Gain Min: 1200
• DC Current Gain: 50
• Gain Bandwidth ft Typ: 50 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-323
• Power Dissipation: 225 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-323
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 50 MHz

RoHS: Yes