Datasheet MJD112-1G - ON Semiconductor DARLINGTON TRANSISTOR, NPN, 100 V, D-PAK
Part Number: MJD112-1G
Detailed Description
Manufacturer: ON Semiconductor
Description: DARLINGTON TRANSISTOR, NPN, 100 V, D-PAK
Specifications:
- Collector Emitter Voltage V(br)ceo: 100 V
- DC Collector Current: 2 A
- DC Current Gain Max (hfe): 12
- Power Dissipation Pd: 20 W
- Transistor Polarity: N Channel
- Transition Frequency Typ ft: 25 MHz
RoHS: Yes
Other Names:
MJD1121G, MJD112 1G
