Datasheet SI4948BEY-T1-GE3 - Vishay MOSFET, PP-CH, 60 V, 3.1 A, SO8

Vishay SI4948BEY-T1-GE3

Part Number: SI4948BEY-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, PP-CH, 60 V, 3.1 A, SO8

data sheetDownload Data Sheet

Docket:
Si4948BEY
Vishay Siliconix
Dual P-Channel 60-V (D-S) 175° MOSFET
PRODUCT SUMMARY
VDS (V) - 60 RDS(on) () 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) - 3.1 - 2.8

Specifications:

  • Current Id Max: -3.1 A
  • Drain Source Voltage Vds: -60 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 100 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 2.4 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Other Names:

SI4948BEYT1GE3, SI4948BEY T1 GE3