Datasheet SI4948BEY-T1-GE3 - Vishay MOSFET, PP-CH, 60 V, 3.1 A, SO8
Part Number: SI4948BEY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, PP-CH, 60 V, 3.1 A, SO8
Docket:
Si4948BEY
Vishay Siliconix
Dual P-Channel 60-V (D-S) 175° MOSFET
PRODUCT SUMMARY
VDS (V) - 60 RDS(on) () 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) - 3.1 - 2.8
Specifications:
- Current Id Max: -3.1 A
- Drain Source Voltage Vds: -60 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 100 MOhm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 2.4 W
- Rds(on) Test Voltage Vgs: -10 V
- Threshold Voltage Vgs Typ: -3 V
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Other Names:
SI4948BEYT1GE3, SI4948BEY T1 GE3