Datasheet SI9934BDY-T1-GE3 - Vishay MOSFET, PP CH, 12 V, 4.8 A, 8SOIC
Part Number: SI9934BDY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, PP CH, 12 V, 4.8 A, 8SOIC
Docket:
Si9934BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 12 RDS(on) () 0.035 at VGS = - 4.5 V 0.056 at VGS = - 2.5 V ID (A) - 6.4 - 5.1
Specifications:
- Current Id Max: -4.8 A
- Drain Source Voltage Vds: -12 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 28 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 1.1 W
- Rds(on) Test Voltage Vgs: -4.5 V
- Threshold Voltage Vgs Typ: -1.4 V
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
RoHS: Yes
Other Names:
SI9934BDYT1GE3, SI9934BDY T1 GE3