Datasheet SIB911DK-T1-GE3 - Vishay MOSFET, DUAL, PP, PPAK SC-75

Detailed Description

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, PPAK SC-75

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Docket:
New Product
SiB911DK
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 2.6 A
• Current Id Max: -2.6 A
• Drain Source Voltage Vds: -20 V
• Junction Temperature Tj Max: 150°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 295 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SC-75
• Power Dissipation: 3.1 W
• Rds(on) Test Voltage Vgs: 8 V
• Rise Time: 45 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: SC-75
• Transistor Polarity: P Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1 V
• Voltage Vgs th Min: 0.4 V

RoHS: Yes

Other Names:

SIB911DKT1GE3, SIB911DK T1 GE3