Datasheet AD8615, AD8616, AD8618 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Precision 20 MHz CMOS Single RRIO Operational Amplifier |
| Pages / Page | 20 / 3 — Data Sheet. AD8615/AD8616/AD8618. SPECIFICATIONS. Table 1. Parameter. … |
| Revision | G |
| File Format / Size | PDF / 453 Kb |
| Document Language | English |
Data Sheet. AD8615/AD8616/AD8618. SPECIFICATIONS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
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Data Sheet AD8615/AD8616/AD8618 SPECIFICATIONS
VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage, AD8616/AD8618 VOS VS = 3.5 V at VCM = 0.5 V and 3.0 V 23 60 µV Offset Voltage, AD8615 23 100 µV VCM = 0 V to 5 V 80 500 µV −40°C < TA < +125°C 800 µV Offset Voltage Drift, AD8616/AD8618 ∆VOS/∆T −40°C < TA < +125°C 1.5 7 µV/°C Offset Voltage Drift, AD8615 3 10 µV/°C Input Bias Current IB 0.2 1 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 550 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 250 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.5 V 80 100 dB Large Signal Voltage Gain AVO RL = 2 kΩ, VO = 0.5 V to 5 V 105 1500 V/mV Input Capacitance CDIFF 2.5 pF CCM 6.7 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 4.98 4.99 V IL = 10 mA 4.88 4.92 V −40°C < TA < +125°C 4.7 V Output Voltage Low VOL IL = 1 mA 7.5 15 mV IL = 10 mA 70 100 mV −40°C < TA < +125°C 200 mV Output Current IOUT ±150 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 3 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 70 90 dB Supply Current per Amplifier ISY VO = 0 V 1.7 2 mA −40°C < TA < +125°C 2.5 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 12 V/µs Settling Time tS To 0.01% <0.5 µs Gain Bandwidth Product GBP 24 MHz Phase Margin Øm 63 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 2.4 µV Voltage Noise Density en f = 1 kHz 10 nV/√Hz f = 10 kHz 7 nV/√Hz Current Noise Density in f = 1 kHz 0.05 pA/√Hz Channel Separation CS f = 10 kHz −115 dB f = 100 kHz −110 dB Rev. G | Page 3 of 20 Document Outline Features Applications General Description Pin Configuration Table of Contents Revision History Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Applications Information Input Overvoltage Protection Output Phase Reversal Driving Capacitive Loads Overload Recovery Time D/A Conversion Low Noise Applications High Speed Photodiode Preamplifier Active Filters Power Dissipation Power Calculations for Varying or Unknown Loads Calculating Power by Measuring Ambient Temperature and Case Temperature Calculating Power by Measuring Supply Current Outline Dimensions Ordering Guide
VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage, AD8616/AD8618 VOS VS = 3.5 V at VCM = 0.5 V and 3.0 V 23 60 µV Offset Voltage, AD8615 23 100 µV VCM = 0 V to 5 V 80 500 µV −40°C < TA < +125°C 800 µV Offset Voltage Drift, AD8616/AD8618 ∆VOS/∆T −40°C < TA < +125°C 1.5 7 µV/°C Offset Voltage Drift, AD8615 3 10 µV/°C Input Bias Current IB 0.2 1 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 550 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 250 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 4.5 V 80 100 dB Large Signal Voltage Gain AVO RL = 2 kΩ, VO = 0.5 V to 5 V 105 1500 V/mV Input Capacitance CDIFF 2.5 pF CCM 6.7 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 4.98 4.99 V IL = 10 mA 4.88 4.92 V −40°C < TA < +125°C 4.7 V Output Voltage Low VOL IL = 1 mA 7.5 15 mV IL = 10 mA 70 100 mV −40°C < TA < +125°C 200 mV Output Current IOUT ±150 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 3 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 70 90 dB Supply Current per Amplifier ISY VO = 0 V 1.7 2 mA −40°C < TA < +125°C 2.5 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 12 V/µs Settling Time tS To 0.01% <0.5 µs Gain Bandwidth Product GBP 24 MHz Phase Margin Øm 63 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 2.4 µV Voltage Noise Density en f = 1 kHz 10 nV/√Hz f = 10 kHz 7 nV/√Hz Current Noise Density in f = 1 kHz 0.05 pA/√Hz Channel Separation CS f = 10 kHz −115 dB f = 100 kHz −110 dB Rev. G | Page 3 of 20 Document Outline Features Applications General Description Pin Configuration Table of Contents Revision History Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Applications Information Input Overvoltage Protection Output Phase Reversal Driving Capacitive Loads Overload Recovery Time D/A Conversion Low Noise Applications High Speed Photodiode Preamplifier Active Filters Power Dissipation Power Calculations for Varying or Unknown Loads Calculating Power by Measuring Ambient Temperature and Case Temperature Calculating Power by Measuring Supply Current Outline Dimensions Ordering Guide
