Datasheet MCP1700 (Microchip) - 4

ManufacturerMicrochip
DescriptionLow Quiescent Current LDO
Pages / Page30 / 4 — MCP1700. DC CHARACTERISTICS (CONTINUED)
Revision09-15-2016
File Format / SizePDF / 846 Kb
Document LanguageEnglish

MCP1700. DC CHARACTERISTICS (CONTINUED)

MCP1700 DC CHARACTERISTICS (CONTINUED)

Model Line for this Datasheet

MCP1700

Text Version of Document

MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Output Noise
Power Supply
Ripple Rejection
Ratio
Thermal
Shutdown
Protection
Note 1:
2:
3:
4:
5:
6: 7: Sym. Min. Typ. Max. Units Conditions
IL = 100 mA, f = 1 kHz, COUT = 1 µF eN — 3 — µV/(Hz)1/2 PSRR — 44 — dB f = 100 Hz, COUT = 1 µF, IL = 50 mA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V TSD — 140 — °C VIN = VR + 1V, IL = 100 µA The minimum VIN must meet two conditions: VIN  2.3V and VIN  VR + 3.0%  VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
TCVOUT = (VOUT-HIGH -VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant. TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges
Specified Temperature Range TA -40 +125 °C Operating Temperature Range TJ -40 +125 °C Storage Temperature Range TA -65 +150 °C JA — — °C/W JC — 19 — °C/W JA — 336 — °C/W JC — 110 — °C/W Thermal Package Resistance
Thermal Resistance, 2x2 DFN
Thermal Resistance, SOT-23
Thermal Resistance, SOT-89
Thermal Resistance, TO-92
Note 1: 91 JA — 180 — °C/W JC — 52 — °C/W JA — 160 — °C/W JC — 66.3 — °C/W EIA/JEDEC® JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability. DS20001826D-page 4  2005-2016 Microchip Technology Inc.
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