Datasheet ADA4522-2-KGD (Analog Devices) - 4

ManufacturerAnalog Devices
Description55 V, EMI Enhanced, Zero Drift, Ultralow Noise, Rail-to-Rail Output Operational Amplifier
Pages / Page10 / 4 — ADA4522-2-KGD. Known Good Die. Parameter Symbol. Test. …
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ADA4522-2-KGD. Known Good Die. Parameter Symbol. Test. Conditions/Comments. Min. Typ. Max. Unit

ADA4522-2-KGD Known Good Die Parameter Symbol Test Conditions/Comments Min Typ Max Unit

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ADA4522-2-KGD Known Good Die Parameter Symbol Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE Slew Rate SR+ RL = 10 kΩ, CL = 50 pF, AV = 1 1.4 V/μs SR− RL = 10 kΩ, CL = 50 pF, AV = 1 1.3 V/μs Gain Bandwidth Product GBP Input voltage (VIN) = 10 mV p-p, RL = 10 kΩ, 2.7 MHz CL = 50 pF, AVO = 100 Unity-Gain Crossover UGC VIN = 10 mV p-p, RL = 10 kΩ, CL = 50 pF, AVO = 1 3 MHz −3 dB Closed-Loop Bandwidth f−3dB VIN = 10 mV p-p, RL = 10 kΩ, CL = 50 pF, AV = 1 6.5 MHz Phase Margin ΦM VIN = 10 mV p-p, RL = 10 kΩ, CL = 50 pF, AVO = 1 64 Degrees Settling Time to 0.1% tS VIN = 1 V step, RL = 10 kΩ, CL = 50 pF, AV = 1 4 μs Channel Separation CS VIN = 1 V p-p, f = 10 kHz, RL = 10 kΩ, CL = 50 pF 98 dB EMI Rejection Ratio of +IN x EMIRR VIN = 100 mVPEAK, frequency = 400 MHz 72 dB VIN = 100 mVPEAK, frequency = 900 MHz 80 dB VIN = 100 mVPEAK, frequency = 1800 MHz 83 dB VIN = 100 mVPEAK, frequency = 2400 MHz 85 dB NOISE PERFORMANCE Total Harmonic Distortion + Noise THD + N AV = +1, frequency = 1 kHz, VIN = 0.6 V rms Bandwidth = 80 kHz 0.001 % Bandwidth = 500 kHz 0.02 % Peak-to-Peak Voltage Noise eN p-p AV = 100, frequency = 0.1 Hz to 10 Hz 117 nV p-p Voltage Noise Density eN AV = 100, frequency = 1 kHz 5.8 nV/√Hz Peak-to-Peak Current Noise iN p-p AV = 100, frequency = 0.1 Hz to 10 Hz 16 pA p-p Current Noise Density iN AV = 100, frequency = 1 kHz 0.8 pA/√Hz
ELECTRICAL CHARACTERISTICS—30 V OPERATION
VSY = 30 V, VCM = VSY/2 V, and TA = 25°C, unless otherwise specified.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS VCM = VSY/2 1 5 μV −40°C ≤ TA ≤ +125°C 7.2 μV Offset Voltage Drift ΔVOS/ΔT 4 22 nV/°C Input Bias Current IB 50 150 pA −40°C ≤ TA ≤ +85°C 500 pA −40°C ≤ TA ≤ +125°C 3 nA Input Offset Current IOS 80 300 pA −40°C ≤ TA ≤ +85°C 400 pA −40°C ≤ TA ≤ +125°C 500 pA Input Voltage Range IVR 0 28.5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 28.5 V 145 160 dB −40°C ≤ TA ≤ +125°C 140 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VOUT = 0.5 V to 29.5 V 140 150 dB −40°C ≤ TA ≤ +125°C 135 dB Input Resistance Differential Mode RINDM 30 kΩ Common Mode RINCM 400 GΩ Input Capacitance Differential Mode CINDM 7 pF Common Mode CINCM 35 pF Rev. 0 | Page 4 of 10 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS—5.0 V OPERATION ELECTRICAL CHARACTERISTICS—30 V OPERATION ELECTRICAL CHARACTERISTICS—55 V OPERATION ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS OUTLINE DIMENSIONS DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS ORDERING GUIDE
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