Datasheet BSC067N06LS3 G - 3
| Description | OptiMOS 3 Power-Transistor |
| Pages / Page | 10 / 3 — BSC067N06LS3 G. Parameter. Symbol Conditions. Values. Unit. min. typ. … |
| File Format / Size | PDF / 467 Kb |
| Document Language | English |
BSC067N06LS3 G. Parameter. Symbol Conditions. Values. Unit. min. typ. max. Dynamic characteristics. Reverse Diode
Text Version of Document
BSC067N06LS3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics
Input capacitance C iss - 3800 5100 pF V Output capacitance C GS=0 V, V DS=30 V, oss - 710 940 f =1 MHz Reverse transfer capacitance Crss - 32 - Turn-on delay time t d(on) - 15 - ns Rise time t r - 26 - V DD=30 V, V GS=10 V, I Turn-off delay time t D=20 A, R G,ext=2 W d(off) - 37 - Fall time t f - 7 - Gate Charge Characteristics5) Gate to source charge Q gs - 14 - nC Gate charge at threshold Q g(th) - 7 - Gate to drain charge Q gd - 5 - V DD=30 V, I D=50 A, V Switching charge Q GS=0 to 4.5 V sw - 12 - Gate charge total Q g - 23 30 Gate plateau voltage V plateau - 3.6 - V V DD=30 V, I D=50 A, Gate charge total Q g - 51 67 nC V GS=0 to 10 V Output charge Q oss V DD=30 V, V GS=0 V - 35 47
Reverse Diode
Diode continuous forward current I S - - 50 A T C=25 °C Diode pulse current I S,pulse - - 200 V GS=0 V, I F=50 A, Diode forward voltage V SD - 0.9 1.2 V T j=25 °C Reverse recovery time t rr - 40 - ns V R=30 V, I F=20A, di Reverse recovery charge Q F/dt =100 A/µs rr - 39 - nC 5) See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2013-09-18
Input capacitance C iss - 3800 5100 pF V Output capacitance C GS=0 V, V DS=30 V, oss - 710 940 f =1 MHz Reverse transfer capacitance Crss - 32 - Turn-on delay time t d(on) - 15 - ns Rise time t r - 26 - V DD=30 V, V GS=10 V, I Turn-off delay time t D=20 A, R G,ext=2 W d(off) - 37 - Fall time t f - 7 - Gate Charge Characteristics5) Gate to source charge Q gs - 14 - nC Gate charge at threshold Q g(th) - 7 - Gate to drain charge Q gd - 5 - V DD=30 V, I D=50 A, V Switching charge Q GS=0 to 4.5 V sw - 12 - Gate charge total Q g - 23 30 Gate plateau voltage V plateau - 3.6 - V V DD=30 V, I D=50 A, Gate charge total Q g - 51 67 nC V GS=0 to 10 V Output charge Q oss V DD=30 V, V GS=0 V - 35 47
Reverse Diode
Diode continuous forward current I S - - 50 A T C=25 °C Diode pulse current I S,pulse - - 200 V GS=0 V, I F=50 A, Diode forward voltage V SD - 0.9 1.2 V T j=25 °C Reverse recovery time t rr - 40 - ns V R=30 V, I F=20A, di Reverse recovery charge Q F/dt =100 A/µs rr - 39 - nC 5) See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2013-09-18
