Schottky Power Rectifier, Surface Mount, 3.0 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
High Performance Schottky Rectifier, 15 A The VS-15TQ060.. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction ...
Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
Dual High Voltage Trench MOS Barrier Schottky Rectifier For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...
1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...