Datasheet Analog Devices HMC1022A-Die

GaAs, pHEMT, MMIC, 0.25 W Power
Amplifier, DC to 48 GHz
HMC1022ACHIPS Data Sheet ACG2 FUNCTIONAL BLOCK DIAGRAM P1dB: 25 dBm (typical) at dc to 30 GHz frequency range
PSAT: 26 dBm (typical) at dc to 30 GHz frequency range
Gain: 11.5 dB (typical)
Output IP3: 33 dBm (typical) at dc to 30 GHz frequency range
Supply voltage: 10 V at 150 mA
50 Ω matched I/O
Die size: 2.89 mm × 1.48 mm × 0.1 mm ACG1 FEATURES
3 4 HMC1022ACHIPS
GND
5 RFOUT/VDD
GND APPLICATIONS
VGG2 Military and space
Test instrumentation 2 GND 6
17133-001 7 ACG3 8 ACG4 1 VGG1 GND GND RFIN Figure 1. GENERAL DESCRIPTION
The HMC1022ACHIPS is a gallium arsenide (GaAs),
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC), distributed
power amplifier that operates from dc to 48 GHz. The amplifier
provides 11.5 dB of small signal gain, 0.25 W (25 dBm) output
power at 1 dB gain compression (P1dB), and a typical output
third-order intercept (IP3) of 33 dBm, while requiring 150 mA …

HMC1022A
v01.1215 Typical Applications Features The HMC1022A is ideal for: High P1dB Output Power: 22 dBm Test Instrumentation High Psat Output Power: 24 dBm Microwave Radio & VSAT High Gain: 12 dB Military & Space High Output IP3: 32 dBm Telecom Infrastructure Supply Voltage: +10 V @ 150 mA Fiber Optics 50 Ohm Matched Input/Output y Die Size: 2.82 x 1.50 x 0.1 mm General Description im in
ar Functional Diagram Pr
el Amplifiers -Linear & Power -Chip GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC -48 GHz The HMC1022A is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC
and 48 GHz. The amplifier provides 12 dB of gain,
32 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 150 mA from
a +10 V supply. The HMC1022A exhibits a slightly
positive gain slope from 10 to 35 GHz, making
it ideal for EW, ECM, Radar and test equipment
applications. The HMC1022A amplifier I/Os are
internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25В° C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -16
9.5 11.5 Typ. Max. Min. 16 -36
9.5 12 Typ.
36 -48 9.5 Max. Units
GHz 11.5 dB Gain Flatness В±0.5 В±0.3 В±1.1 dB Gain Variation Over Temperature 0.012 0.018 0.041 dB/ В°C
dB Input Return Loss 18 16 15 Output Return Loss 28 22 18 dB 19 dBm 23.5 21 dBm Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat) 20 22 …