Datasheet AD8003 (Analog Devices) - 6

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Data Sheet AD8003 ABSOLUTE MAXIMUM RATINGS Table 3.
RMS output voltages should be considered. If RL is referenced to
Parameter Rating
−VS, as in single-supply operation, the total drive power is VS × Supply Voltage 11 V IOUT. If the rms signal levels are indeterminate, consider the Power Dissipation See Figure 3 worst case, when VOUT = VS/4 for RL to midsupply. Common-Mode Input Voltage −VS − 0.7 V to +VS + 0.7 V 2 Differential Input Voltage ±V V /4 S P = (V × I ) ( ) S + D S S Exposed Paddle Voltage −V R S L Storage Temperature Range −65°C to +125°C In single-supply operation with R Operating Temperature Range −40°C to +85°C L referenced to −VS, worst case is V Lead Temperature (Soldering 10 sec) 300°C OUT = VS/2. Junction Temperature 150°C Airflow increases heat dissipation, effectively reducing θJA. Stresses above those listed under Absolute Maximum Ratings In addition, more metal directly in contact with the package may cause permanent damage to the device. This is a stress leads and exposed paddle from metal traces, through holes, rating only; functional operation of the device at these or any ground, and power planes reduce θJA. other conditions above those indicated in the operational Figure 3 shows the maximum safe power dissipation in the section of this specification is not implied. Exposure to absolute package vs. the ambient temperature for the exposed paddle, maximum rating conditions for extended periods may affect 4 mm × 4 mm LFCSP_WQ (70°C/W) package on a JEDEC device reliability. standard 4-layer board. θJA values are approximations.
THERMAL RESISTANCE 3.0
θJA is specified for the worst-case conditions, that is, θJA is specified
)
for device soldered in circuit board for surface-mount packages.
2.5 (W N IO Table 4. Thermal Resistance T PA 2.0 Package Type θJA Unit ISSI
24-Lead LFCSP_WQ 70 °C/W
D 1.5 ER W Maximum Power Dissipation M PO 1.0
The maximum safe power dissipation for the AD8003 is limited
MU XI
by the associated rise in junction temperature (TJ) on the die. At
0.5 MA
approximately 150°C, which is the glass transition temperature, 037 the plastic changes its properties. Even temporarily exceeding 05721-
0 –55 –35 –15 5 25 45 65 85 105 125
this temperature limit may change the stresses that the package
AMBIENT TEMPERATURE (°C)
exerts on the die, permanently shifting the parametric performance Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board of the AD8003. Exceeding a junction temperature of 175°C for an extended period can result in changes in silicon devices,
ESD CAUTION
potentially causing degradation or loss of functionality. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the die due to the AD8003 drive at the output. The quiescent power is the voltage between the supply pins (V S) times the quiescent current (IS). PD = Quiescent Power + (Total Drive Power – Load Power)   P = (V × I ) 2 V V V S OUT OUT + × – D S S   2 R  R L L Rev. C | Page 5 of 16 Document Outline Features Applications Connection Diagram General Description Table of Contents Revision History Specifications with ±5 V Supply Specifications with +5 V Supply Absolute Maximum Ratings Thermal Resistance Maximum Power Dissipation ESD Caution Typical Performance Characteristics Applications Information Gain Configurations RGB Video Driver Printed Circuit Board Layout Low Distortion Pinout Signal Routing Exposed Paddle Power Supply Bypassing Grounding Outline Dimensions Ordering Guide