Datasheet AD8641, AD8642, AD8643 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | Low Power, Rail-to-Rail Output, Precision JFET Amplifiers |
| Pages / Page | 15 / 4 — AD8641/AD8642/AD8643. Data Sheet. Table 2. Parameter. Symbol. Test … |
| Revision | F |
| File Format / Size | PDF / 323 Kb |
| Document Language | English |
AD8641/AD8642/AD8643. Data Sheet. Table 2. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
AD8641/AD8642/AD8643 Data Sheet
VS = ±13 V, VCM = 0 V, TA =25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 70 750 µV AD8643 LFCSP only 1 mV −40°C < TA < +125°C 1.5 mV Input Bias Current IB 0.25 1 pA −40°C < TA < +125°C 260 pA Input Offset Current IOS 0.5 pA −40°C < TA < +125°C 65 pA Input Voltage Range −13 +10 V Common-Mode Rejection Ratio CMRR VCM = −13 V to +10 V 90 107 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = −11 V to +11 V 215 290 V/mV Offset Voltage Drift ∆VOS/∆T −40°C < TA < +125°C 2.5 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH +12.95 V IL = 1 mA, −40°C to +125°C +12.94 V Output Voltage Low VOL −12.95 V IL = 1 mA, −40°C to +125°C −12.94 V Output Current IOUT ±12 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.5 V to ±13 V 90 107 dB Supply Current/Amplifier ISY 200 290 µA −40°C < TA < +125°C 330 µA DYNAMIC PERFORMANCE Slew Rate SR 3 V/µs Gain Bandwidth Product GBP 3.5 MHz Phase Margin Øm 60 Degrees NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4.2 µV p-p Voltage Noise Density eN f = 1 kHz 27.5 nV/√Hz Current Noise Density iN f = 1 kHz 0.5 fA/√Hz Rev. F | Page 4 of 15 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE
VS = ±13 V, VCM = 0 V, TA =25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 70 750 µV AD8643 LFCSP only 1 mV −40°C < TA < +125°C 1.5 mV Input Bias Current IB 0.25 1 pA −40°C < TA < +125°C 260 pA Input Offset Current IOS 0.5 pA −40°C < TA < +125°C 65 pA Input Voltage Range −13 +10 V Common-Mode Rejection Ratio CMRR VCM = −13 V to +10 V 90 107 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = −11 V to +11 V 215 290 V/mV Offset Voltage Drift ∆VOS/∆T −40°C < TA < +125°C 2.5 µV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH +12.95 V IL = 1 mA, −40°C to +125°C +12.94 V Output Voltage Low VOL −12.95 V IL = 1 mA, −40°C to +125°C −12.94 V Output Current IOUT ±12 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.5 V to ±13 V 90 107 dB Supply Current/Amplifier ISY 200 290 µA −40°C < TA < +125°C 330 µA DYNAMIC PERFORMANCE Slew Rate SR 3 V/µs Gain Bandwidth Product GBP 3.5 MHz Phase Margin Øm 60 Degrees NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4.2 µV p-p Voltage Noise Density eN f = 1 kHz 27.5 nV/√Hz Current Noise Density iN f = 1 kHz 0.5 fA/√Hz Rev. F | Page 4 of 15 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE
