Datasheet OP196, OP296, OP496 (Analog Devices) - 2
| Manufacturer | Analog Devices |
| Description | Micropower RRIO Operational Amplifiers |
| Pages / Page | 19 / 2 — OP196/OP296/OP496–SPECIFICATIONS ELECTRICAL SPECIFICATIONS (@ VS = 5.0 V, … |
| Revision | E |
| File Format / Size | PDF / 2.4 Mb |
| Document Language | English |
OP196/OP296/OP496–SPECIFICATIONS ELECTRICAL SPECIFICATIONS (@ VS = 5.0 V, VCM = 2.5 V, TA = 25
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OP196/OP296/OP496–SPECIFICATIONS ELECTRICAL SPECIFICATIONS (@ VS = 5.0 V, VCM = 2.5 V, TA = 25
ⴗ
C, unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV –40°C ≤ TA ≤ +125°C 650 µV OP296H, OP496H 800 µV –40°C ≤ TA ≤ +125°C 1.2 mV Input Bias Current IB –40°C ≤ TA ≤ +125°C ±10 ±50 nA Input Offset Current I ± OS 1.5 ±8 nA –40°C ≤ TA ≤ +125°C ±20 nA Input Voltage Range VCM 0 5.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5.0 V, –40°C ≤ TA ≤ +125°C 65 dB Large Signal Voltage Gain AVO RL = 100 kΩ, 0.30 V ≤ VOUT ≤ 4.7 V, –40°C ≤ TA ≤ +125°C 150 200 V/mV Long-Term Offset Voltage VOS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆VOS/∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V + OH IL = 100 µA 4.85 4.92 V IL = 1 mA 4.30 4.56 V IL = 2 mA 4.1 V Output Voltage Swing Low V 100 μA OL IL = – 36 70 mV IL = –1 mA 350 550 mV IL = –2 mA 750 mV Output Current IOUT ±4 mA POWER SUPPLY Power Supply Rejection Ratio PSRR ±2.5 V ≤ VS ≤ ±6 V, –40°C ≤ TA ≤ +125°C 85 dB Supply Current per Amplifier ISY VOUT = 2.5 V, RL = ∞ 60 µA –40°C ≤ TA ≤ +125°C 45 80 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ 0.3 V/µs Gain Bandwidth Product GBP 350 kHz Phase Margin øm 47 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/√Hz Current Noise Density in f = 1 kHz 0.19 pA/√Hz NOTES 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta. Specifications subject to change without notice. –2– REV. E Document Outline FEATURES APPLICATIONS PIN CONFIGURATIONS GENERAL DESCRIPTION OP196/OP296/OP496--SPECIFICATIONS Electrical Specifications (@Vs = 5.0 V) Electrical Specifications (@Vs = 3.0 V) Electrical Specifications (@Vs = 12.0 V) ABSOLUTE MAXIMUM RATINGS ESD Caution TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION Functional Description Input Overvoltage Protection Output Phase Reversal Input Offset Voltage Nulling Driving Capacitive Loads A Micropower False-Ground Generator Single-Supply Half-Wave and Full-Wave Rectifiers Square Wave Oscillator A 3 V Low Dropout, Linear Voltage Regulator Buffering a DAC Output A High-Side Current Monitor A Single-Supply RTD Amplifier OUTLINE DIMENSIONS Ordering Guide REVISION HISTORY
OP196/OP296/OP496–SPECIFICATIONS ELECTRICAL SPECIFICATIONS (@ VS = 5.0 V, VCM = 2.5 V, TA = 25
ⴗ
C, unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV –40°C ≤ TA ≤ +125°C 650 µV OP296H, OP496H 800 µV –40°C ≤ TA ≤ +125°C 1.2 mV Input Bias Current IB –40°C ≤ TA ≤ +125°C ±10 ±50 nA Input Offset Current I ± OS 1.5 ±8 nA –40°C ≤ TA ≤ +125°C ±20 nA Input Voltage Range VCM 0 5.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5.0 V, –40°C ≤ TA ≤ +125°C 65 dB Large Signal Voltage Gain AVO RL = 100 kΩ, 0.30 V ≤ VOUT ≤ 4.7 V, –40°C ≤ TA ≤ +125°C 150 200 V/mV Long-Term Offset Voltage VOS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆VOS/∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V + OH IL = 100 µA 4.85 4.92 V IL = 1 mA 4.30 4.56 V IL = 2 mA 4.1 V Output Voltage Swing Low V 100 μA OL IL = – 36 70 mV IL = –1 mA 350 550 mV IL = –2 mA 750 mV Output Current IOUT ±4 mA POWER SUPPLY Power Supply Rejection Ratio PSRR ±2.5 V ≤ VS ≤ ±6 V, –40°C ≤ TA ≤ +125°C 85 dB Supply Current per Amplifier ISY VOUT = 2.5 V, RL = ∞ 60 µA –40°C ≤ TA ≤ +125°C 45 80 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ 0.3 V/µs Gain Bandwidth Product GBP 350 kHz Phase Margin øm 47 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/√Hz Current Noise Density in f = 1 kHz 0.19 pA/√Hz NOTES 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta. Specifications subject to change without notice. –2– REV. E Document Outline FEATURES APPLICATIONS PIN CONFIGURATIONS GENERAL DESCRIPTION OP196/OP296/OP496--SPECIFICATIONS Electrical Specifications (@Vs = 5.0 V) Electrical Specifications (@Vs = 3.0 V) Electrical Specifications (@Vs = 12.0 V) ABSOLUTE MAXIMUM RATINGS ESD Caution TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION Functional Description Input Overvoltage Protection Output Phase Reversal Input Offset Voltage Nulling Driving Capacitive Loads A Micropower False-Ground Generator Single-Supply Half-Wave and Full-Wave Rectifiers Square Wave Oscillator A 3 V Low Dropout, Linear Voltage Regulator Buffering a DAC Output A High-Side Current Monitor A Single-Supply RTD Amplifier OUTLINE DIMENSIONS Ordering Guide REVISION HISTORY
