Datasheet LTC3499, LTC3499B (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 750mA Synchronous Step-Up DC/DC Converters with Reverse-Battery Protection |
| Pages / Page | 16 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes specifications that apply over … |
| File Format / Size | PDF / 252 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. The. denotes specifications that apply over the full operating temperature
Model Line for this Datasheet
Text Version of Document
LTC3499/LTC3499B
ELECTRICAL CHARACTERISTICS The
l
denotes specifications that apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 2.4V, VOUT = 5V, SHDN = 2.4V, TA = TJ unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IFB FB Input Current VFB = 1.22V 3 50 nA IVIN VIN Quiescent Current No Output Load l 300 600 µA ISD VIN Quiescent Current in Shutdown SHDN = 0V, VOUT = 0V 0.1 1 µA IBURST Quiescent Current – Burst Mode Operation VIN Current at 2.4V (LTC3499 Only) 20 µA VOUT Current at 5V (LTC3499 Only) 1.5 µA INMOS NMOS Switch Leakage Current VSW = 6V 0.1 5 µA IPMOS PMOS Switch Leakage Current VOUT = 6V, VSW = 0V 0.1 5 µA RNMOS NMOS Switch On Resistance VOUT = 3.3V 0.45 Ω VOUT = 5V 0.4 Ω RPMOS PMOS Switch On Resistance VOUT = 3.3V 0.58 Ω VOUT = 5V 0.45 Ω ILIM NMOS Current Limit l 0.75 1 A tDLY, ILIM Current Limit Delay to Output Note 2 60 ns DMAX Maximum Duty Cycle l 80 85 % DMIN Minimum Duty Cycle l 0 % fOSC Frequency Accuracy l 1 1.2 1.4 MHz GmEA Error Amplifier Transconductance 40 µmhos ISOURCE Error Amplifier Source Current –5 µA ISINK Error Amplifier Sink Current 5 µA ISS SS Current Source VSS = 1V –3 µA VOV VOUT Overvoltage Threshold 6.8 V VOV(HYST) VOUT Overvoltage Hysteresis 400 mV
Shutdown
VSHDN(LOW) SHDN Input Low Voltage l 0.2 V VSHDN(HIGH) SHDN Input High Voltage Measured at SW l 1.2 V ISD SHDN Input Current 1 µA
Reverse Battery
IVOUT,REVBATT VOUT Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V l 5 µA IVIN,REVBATT VIN and VSW Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V l –5 µA ISHDN,REVBATT SHDN Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V l –5 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
These ICs include overtemperature protection that is intended may cause permanent damage to the device. Exposure to any Absolute to protect the devices during momentary overload conditions. Junction Maximum Rating condition for extended periods may affect device temperatures will exceed 125°C when overtemperature protection is reliability and lifetime. active. Continuous operation above the specified maximum operating
Note 2:
Specification is guaranteed by design and not 100% tested in temperature range may impair device reliability. production.
Note 3:
The LTC3499E/LTC3499BE are guaranteed to meet device specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating temperature are assured by design, characterization and correlation with statistical process controls. 3499fc 3
ELECTRICAL CHARACTERISTICS The
l
denotes specifications that apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = 2.4V, VOUT = 5V, SHDN = 2.4V, TA = TJ unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IFB FB Input Current VFB = 1.22V 3 50 nA IVIN VIN Quiescent Current No Output Load l 300 600 µA ISD VIN Quiescent Current in Shutdown SHDN = 0V, VOUT = 0V 0.1 1 µA IBURST Quiescent Current – Burst Mode Operation VIN Current at 2.4V (LTC3499 Only) 20 µA VOUT Current at 5V (LTC3499 Only) 1.5 µA INMOS NMOS Switch Leakage Current VSW = 6V 0.1 5 µA IPMOS PMOS Switch Leakage Current VOUT = 6V, VSW = 0V 0.1 5 µA RNMOS NMOS Switch On Resistance VOUT = 3.3V 0.45 Ω VOUT = 5V 0.4 Ω RPMOS PMOS Switch On Resistance VOUT = 3.3V 0.58 Ω VOUT = 5V 0.45 Ω ILIM NMOS Current Limit l 0.75 1 A tDLY, ILIM Current Limit Delay to Output Note 2 60 ns DMAX Maximum Duty Cycle l 80 85 % DMIN Minimum Duty Cycle l 0 % fOSC Frequency Accuracy l 1 1.2 1.4 MHz GmEA Error Amplifier Transconductance 40 µmhos ISOURCE Error Amplifier Source Current –5 µA ISINK Error Amplifier Sink Current 5 µA ISS SS Current Source VSS = 1V –3 µA VOV VOUT Overvoltage Threshold 6.8 V VOV(HYST) VOUT Overvoltage Hysteresis 400 mV
Shutdown
VSHDN(LOW) SHDN Input Low Voltage l 0.2 V VSHDN(HIGH) SHDN Input High Voltage Measured at SW l 1.2 V ISD SHDN Input Current 1 µA
Reverse Battery
IVOUT,REVBATT VOUT Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V l 5 µA IVIN,REVBATT VIN and VSW Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V l –5 µA ISHDN,REVBATT SHDN Reverse-Battery Current VOUT = 0V, VIN = VSHDN = VSW = –6V l –5 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 4:
These ICs include overtemperature protection that is intended may cause permanent damage to the device. Exposure to any Absolute to protect the devices during momentary overload conditions. Junction Maximum Rating condition for extended periods may affect device temperatures will exceed 125°C when overtemperature protection is reliability and lifetime. active. Continuous operation above the specified maximum operating
Note 2:
Specification is guaranteed by design and not 100% tested in temperature range may impair device reliability. production.
Note 3:
The LTC3499E/LTC3499BE are guaranteed to meet device specifications from 0°C to 85°C. Specifications over the –40°C to 85°C operating temperature are assured by design, characterization and correlation with statistical process controls. 3499fc 3
