Datasheet AD8236 (Analog Devices) - 8

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AD8236 ABSOLUTE MAXIMUM RATINGS Table 4.
The difference between the total drive power and the load power is
Parameter Rating
the drive power dissipated in the package. Supply Voltage 6 V PD = Quiescent Power + (Total Drive Power – Load Power) Power Dissipation See Figure 3 2 ⎛ ⎞ Output Short-Circuit Current 55 mA P = (V × I ) V V V S OUT OUT + × – D S S ⎜⎜ ⎟⎟ Input Voltage (Common Mode) ±VS 2 R R ⎝ L ⎠ L Differential Input Voltage ±VS RMS output voltages should be considered. If RL is referenced to Storage Temperature Range −65°C to +125°C −VS, as in single-supply operation, the total drive power is VS × Operating Temperature Range −40°C to +125°C IOUT. If the rms signal levels are indeterminate, consider the worst Lead Temperature (Soldering, 10 sec) 300°C case, when VOUT = VS/4 for RL to midsupply Junction Temperature 140°C 2 θ V / 4 JA (4-Layer JEDEC Standard Board) P = V × I + D ( ) ( ) S 8-Lead MSOP 135°C/W S S RL Package Glass Transition Temperature In single-supply operation with RL referenced to −VS, worst case 8-Lead MSOP 140°C is VOUT = VS/2. ESD Human Body Model 2 kV Airflow increases heat dissipation, effectively reducing θJA. In Charge Device Model 1 kV addition, more metal directly in contact with the package leads Machine Model 200 V from metal traces, through holes, ground, and power planes reduces the θJA. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress Figure 3 shows the maximum safe power dissipation in the package rating only; functional operation of the device at these or any vs. the ambient temperature for the 8-lead MSOP on a 4-layer other conditions above those indicated in the operational JEDEC standard board. θJA values are approximations. section of this specification is not implied. Exposure to absolute
2.00
maximum rating conditions for extended periods may affect
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device reliability.
W N ( 1.50 MAXIMUM POWER DISSIPATION IO AT IP 1.25
The maximum safe power dissipation in the package of the
S S
AD8236 is limited by the associated rise in junction temperature
R DI 1.00 E
(T
W
J) on the die. The plastic encapsulating the die locally reaches
O 0.75
the junction temperature. At approximately 140°C, which is the
P UM
glass transition temperature, the plastic changes its properties.
IM 0.50
Even temporarily exceeding this temperature limit may change
AX M 0.25
the stresses that the package exerts on the die, permanently shifting the parametric performance of the AD8236.
0
5
–40 –20 0 20 40 60 80 100 120
040- The still-air thermal properties of the package and PCB (θ 00 JA),
AMBIENT TEMPERATURE (°C)
08 the ambient temperature (TA), and the total power dissipated in Figure 3. Maximum Power Dissipation vs. Ambient Temperature the package (PD) determine the junction temperature of the die. The junction temperature is calculated as
ESD CAUTION
TJ = TA + (PD × θJA) The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (I S). Assuming the load (RL) is referenced to midsupply, the total drive power is VS/2 × IOUT, some of which is dissipated in the package and some in the load (VOUT × IOUT). Rev. 0 | Page 7 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION CONNECTION DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION BASIC OPERATION GAIN SELECTION LAYOUT Grounding REFERENCE TERMINAL POWER SUPPLY REGULATION AND BYPASSING INPUT BIAS CURRENT RETURN PATH INPUT PROTECTION RF INTERFERENCE COMMON-MODE INPUT VOLTAGE RANGE APPLICATIONS INFORMATION AC-COUPLED INSTRUMENTATION AMPLIFIER LOW POWER HEART RATE MONITOR OUTLINE DIMENSIONS ORDERING GUIDE