Datasheet AMP02 (Analog Devices) - 3

AMP02–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ VS =
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15 V, VCM = 0 V, TA = 25
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C, unless otherwise noted.) AMP02E AMP02F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
OFFSET VOLTAGE Input Offset Voltage VIOS TA = 25°C 20 100 40 200 µV –40°C ≤ TA ≤ +85°C 50 200 100 350 µV Input Offset Voltage Drift TCVIOS –40°C ≤ TA ≤ +85°C 0.5 2 1 4 µV/°C Output Offset Voltage VOOS TA = 25°C 1 4 2 8 mV –40°C ≤ TA ≤ +85°C 4 10 9 20 mV Output Offset Voltage Drift TCVOOS –40°C ≤ TA ≤ +85°C 50 100 100 200 µV/°C Power Supply Rejection PSR VS = ± 4.8 V to ± 18 V G = 100, 1000 115 125 110 115 dB G = 10 100 110 95 100 dB G = 1 80 90 75 80 dB VS = ± 4.8 V to ± 18 V –40°C ≤ TA ≤ +85°C G = 1000, 100 110 120 105 110 dB G = 10 95 110 90 95 dB G = 1 75 90 70 75 dB INPUT CURRENT Input Bias Current IB TA = 25°C 2 10 4 20 nA Input Bias Current Drift TCIB –40°C ≤ TA ≤ +85°C 150 250 pA/°C Input Offset Current IOS TA = 25°C 1.2 5 2 10 nA Input Offset Current Drift TCIOS –40°C ≤ TA ≤ +85°C 9 15 pA/°C INPUT Input Resistance RIN Differential, G ≤ 1000 10 10 GΩ Common Mode, G = 1000 16.5 16.5 GΩ Input Voltage Range IVR TA = 25°C1 ±11 ±11 V Common-Mode Rejection CMR VCM = ± 11 V G = 1000, 100 115 120 110 115 dB G = 10 100 115 95 110 dB G = 1 80 95 75 90 dB VCM = ± 11 V –40°C ≤ TA ≤ +85°C G = 100, 1000 110 120 105 115 dB G = 10 95 110 90 105 dB G = 1 75 90 70 85 dB GAIN Gain Equation G = 1000 0.50 0.70 % 50 kΩ Accuracy G = +1 G = 100 0.30 0.50 % RG G = 10 0.25 0.40 % G = 1 0.02 0.05 % Gain Range G 1 10k 1 10k V/V Nonlinearity G = 1 to 1000 0.006 0.006 % Temperature Coefficient GTC 1 ≤ G ≤ 10002, 3 20 50 20 50 ppm/°C OUTPUT RATING Output Voltage Swing VOUT TA = 25°C, RL = 1 kΩ ±12 ±13 ±12 ±13 V RL = 1 kΩ, –40°C ≤ TA ≤ +85°C ±11 ±12 ±11 ±12 V Positive Current Limit Output-to-Ground Short 22 22 mA Negative Current Limit Output-to-Ground Short 32 32 mA NOISE Voltage Density, RTI en fO = 1 kHz G = 1000 9 9 nV/√Hz G = 100 10 10 nV/√Hz G = 10 18 18 nV/√Hz G = 1 120 120 nV/√Hz Noise Current Density, RTI in fO = 1 kHz, G = 1000 0.4 0.4 pA/√Hz Input Noise Voltage en p-p 0.1 Hz to 10 Hz G = 1000 0.4 0.4 µV p-p G = 100 0.5 0.5 µV p-p G = 10 1.2 1.2 µV p-p DYNAMIC RESPONSE Small-Signal Bandwidth BW G = 1 1200 1200 kHz (–3 dB) G = 10 300 300 kHz G = 100, 1000 200 200 kHz Slew Rate SR G = 10, RL = 1 kΩ 4 6 4 6 V/µs Settling Time tS To 0.01% ± 10 V Step G = 1 to 1000 10 10 µs SENSE INPUT Input Resistance RIN 25 25 kΩ Voltage Range ±11 ± 11 V REFERENCE INPUT Input Resistance RIN 50 50 kΩ Voltage Range ±11 ±11 V Gain to Output 1 1 V/V –2– REV. E Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ORDERING GUIDE WAFER TEST LIMITS Typical Performance Characteristics APPLICATIONS INFORMATION Input and Output Offset Voltages Input Bias and Offset Currents Gain Common-Mode Rejection Grounding Sense and Reference Terminals Overvoltage Protection Power Supply Considerations OUTLINE DIMENSIONS Revision History