Datasheet DN3145 (Microchip)
| Manufacturer | Microchip |
| Description | N-Channel Depletion-Mode Vertical DMOS FETs |
| Pages / Page | 3 / 1 — Supertex inc. DN3145. N-Channel Depletion-Mode. Vertical DMOS FETs. … |
| File Format / Size | PDF / 538 Kb |
| Document Language | English |
Supertex inc. DN3145. N-Channel Depletion-Mode. Vertical DMOS FETs. Features. General Description. Applications. Ordering Information
Model Line for this Datasheet
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Supertex inc. DN3145 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description
► High input impedance The Supertex DN3145 is a depletion-mode (normally-on) ► Low input capacitance transistor utilizing an advanced vertical DMOS structure and ► Fast switching speeds Supertex’s well-proven silicon-gate manufacturing process. ► Low on-resistance This combination produces a device with the power handling ► Free from secondary breakdown capabilities of bipolar transistors and with the high input ► Low input and output leakage impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this
Applications
device is free from thermal runaway and thermally-induced secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Constant current sources high breakdown voltage, high input impedance, low input ► Power supply circuits capacitance, and fast switching speeds are desired. ► Telecom
Ordering Information Product Summary Part Number Package Option Packing R I BV /BV DS(ON) DSS
DN3145N8-G TO-243AA (SOT-89) 2000/Reel
DSX DGX (max) (min)
-G denotes a lead (Pb)-free / RoHS compliant package. 450V 60Ω 120mA Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings Pin Configuration Parameter Value DRAIN
Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V
SOURCE DRAIN
Operating and storage
GATE
temperature -55OC to +150OC
TO-243AA (SOT-89)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Product Marking Typical Thermal Resistance DN1MW
W = Code for week sealed = “Green” Packaging
Package θja
Package may or may not include the following marks: Si or TO-243AA (SOT-89) 133OC/W
‡ TO-243AA (SOT-89) Notes:
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm. Doc.# DSFP-DN3145
Supertex inc.
A062713
www.supertex.com
► High input impedance The Supertex DN3145 is a depletion-mode (normally-on) ► Low input capacitance transistor utilizing an advanced vertical DMOS structure and ► Fast switching speeds Supertex’s well-proven silicon-gate manufacturing process. ► Low on-resistance This combination produces a device with the power handling ► Free from secondary breakdown capabilities of bipolar transistors and with the high input ► Low input and output leakage impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this
Applications
device is free from thermal runaway and thermally-induced secondary breakdown. ► Normally-on switches ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Constant current sources high breakdown voltage, high input impedance, low input ► Power supply circuits capacitance, and fast switching speeds are desired. ► Telecom
Ordering Information Product Summary Part Number Package Option Packing R I BV /BV DS(ON) DSS
DN3145N8-G TO-243AA (SOT-89) 2000/Reel
DSX DGX (max) (min)
-G denotes a lead (Pb)-free / RoHS compliant package. 450V 60Ω 120mA Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings Pin Configuration Parameter Value DRAIN
Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V
SOURCE DRAIN
Operating and storage
GATE
temperature -55OC to +150OC
TO-243AA (SOT-89)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Product Marking Typical Thermal Resistance DN1MW
W = Code for week sealed = “Green” Packaging
Package θja
Package may or may not include the following marks: Si or TO-243AA (SOT-89) 133OC/W
‡ TO-243AA (SOT-89) Notes:
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm. Doc.# DSFP-DN3145
Supertex inc.
A062713
www.supertex.com
