Datasheet DN3765 (Microchip)
| Manufacturer | Microchip |
| Description | N-Channel Depletion-Mode Vertical DMOS FET Features |
| Pages / Page | 3 / 1 — Supertex inc. DN3765. N-Channel Depletion-Mode. Vertical DMOS FET. … |
| File Format / Size | PDF / 556 Kb |
| Document Language | English |
Supertex inc. DN3765. N-Channel Depletion-Mode. Vertical DMOS FET. Features. General Description. Applications. Ordering Information
Model Line for this Datasheet
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Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description
► High input impedance This depletion-mode (normally-on) transistor utilizes an ► Low input capacitance advanced vertical DMOS structure and Supertex’s well- ► Fast switching speeds proven silicon-gate manufacturing process. This combination ► Low on-resistance produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and ► Free from secondary breakdown positive temperature coefficient inherent in MOS devices. ► Low input and output leakage Characteristic of all MOS structures, this device is free
Applications
from thermal runaway and thermally-induced secondary ► Normally-on switches breakdown. ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Linear amplifiers high breakdown voltage, high input impedance, low input ► Constant current sources capacitance, and fast switching speeds are desired. ► Telecom
Ordering Information Product Summary Part Number Package Option Packing BV /BV R DSX DGX DS(ON) (max) IDSS (min)
DN3765K4-G TO-252 (D-PAK) 2000/Reel 650V 8.0Ω 200mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value
Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V
SOURCE GATE
Operating and storage temperature -55OC to +150OC Maximum junction temperature 150OC
TO-252 (D-PAK)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All
Product Marking
voltages are referenced to device ground. YY = Year Sealed
Si YYWW
WW = Week Sealed
DN3765 Typical Thermal Resistance
L = Lot Number
LLLLLLL
= “Green” Packaging
Package θja
Package may or may not include the following marks: Si or TO-252 (D-PAK) 81OC/W
TO-252 (D-PAK)
Doc.# DSFP-DN3765
Supertex inc.
A070113
www.supertex.com
► High input impedance This depletion-mode (normally-on) transistor utilizes an ► Low input capacitance advanced vertical DMOS structure and Supertex’s well- ► Fast switching speeds proven silicon-gate manufacturing process. This combination ► Low on-resistance produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and ► Free from secondary breakdown positive temperature coefficient inherent in MOS devices. ► Low input and output leakage Characteristic of all MOS structures, this device is free
Applications
from thermal runaway and thermally-induced secondary ► Normally-on switches breakdown. ► Solid state relays Supertex’s vertical DMOS FETs are ideally suited to a ► Converters wide range of switching and amplifying applications where ► Linear amplifiers high breakdown voltage, high input impedance, low input ► Constant current sources capacitance, and fast switching speeds are desired. ► Telecom
Ordering Information Product Summary Part Number Package Option Packing BV /BV R DSX DGX DS(ON) (max) IDSS (min)
DN3765K4-G TO-252 (D-PAK) 2000/Reel 650V 8.0Ω 200mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value
Drain-to-source voltage BVDSX Drain-to-gate voltage BVDGX Gate-to-source voltage ±20V
SOURCE GATE
Operating and storage temperature -55OC to +150OC Maximum junction temperature 150OC
TO-252 (D-PAK)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All
Product Marking
voltages are referenced to device ground. YY = Year Sealed
Si YYWW
WW = Week Sealed
DN3765 Typical Thermal Resistance
L = Lot Number
LLLLLLL
= “Green” Packaging
Package θja
Package may or may not include the following marks: Si or TO-252 (D-PAK) 81OC/W
TO-252 (D-PAK)
Doc.# DSFP-DN3765
Supertex inc.
A070113
www.supertex.com
