Datasheet DN3765 (Microchip) - 2

DN3765 Thermal Characteristics Package I I Power Dissipation ‡ D D I † I (continuous)† (pulsed) @T = 25OC DR DRM A
TO-252 (D-PAK) 300mA 500mA 2.5W 300mA 500mA
Notes:
† I (continuous) is limited by max rated T of 150OC. D j ‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T = 25OC unless otherwise specified) A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-source breakdown voltage 650 - - V V = -5.0V, I = 100µA DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10µA GS(OFF) DS D ΔV Change in V with temperature - - -4.5 mV/OC V = 25V, I = 10µA GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = ± 20V, V = 0V GSS GS DS - - 10 µA V = -10V, V = Max Rating GS DS I Drain-to-source leakage current D(OFF) - - 1.0 mA V = -10V, V = 0.8 Max Rating, GS DS T = 125°C A I Saturated drain-to-source current 200 - - mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - - 8.0 Ω V = 0V, I = 150mA DS(ON) GS D ΔR Change in R with temperature - - 1.1 %/OC V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transductance 100 - - mmho I = 100mA, V = 10V FS D DS C Input capacitance - - 825 ISS V = -10V, GS C Common source output capacitance - - 190 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 110 RSS t Turn-on delay time - - 50 d(ON) V = 25V, DD t Rise time - - 75 r ns I = 150mA, D t Turn-off delay time - - 75 d(OFF) R = 25Ω GEN t Fall time - - 100 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 200mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 200mA rr GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
90%
VDD INPUT Pulse
R 10%
Generator
L
-10V OUTPUT
t t (ON) (OFF) RGEN t t t t d(ON) r d(OFF) f
VDD INPUT
10% 10%
D.U.T. OUTPUT 0V
90% 90% Doc.# DSFP-DN3765
Supertex inc.
A070113 2
www.supertex.com