Datasheet LND01 (Microchip)
| Manufacturer | Microchip |
| Description | Lateral N-Channel Depletion-Mode MOSFET |
| Pages / Page | 12 / 1 — LND01. Lateral N-Channel Depletion-Mode MOSFET. Features. General … |
| File Format / Size | PDF / 552 Kb |
| Document Language | English |
LND01. Lateral N-Channel Depletion-Mode MOSFET. Features. General Description. Applications. Package Type. 5-lead SOT-23. DRAIN. SOURCE
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LND01 Lateral N-Channel Depletion-Mode MOSFET Features General Description
• Bi-directional The LND01 is a low-threshold, Depletion-mode • Low On-resistance (normally-on) transistor that uses an advanced lateral • Low Input Capacitance DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a • Fast Switching Speeds device with the power handling capabilities of bipolar • High Input Impedance and High Gain transistors as well as the high input impedance and • Low Power Drive Requirement positive temperature coefficient inherent in • Ease of Paralleling MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally
Applications
induced secondary breakdown. The body of the transistor is connected to the gate pin. • Normally-on Switches The channel is therefore being pinched off by both the • Solid-state Relays gate and body. The gate pin has a diode connected to • Converters the drain terminal and another diode connected to the • Constant Current Sources source terminal. • Analog Switches
Package Type 5-lead SOT-23 DRAIN SOURCE N/C GATE N/C
See Table 2-1 for pin information. 2017 Microchip Technology Inc. DS20005696A-page 1 Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Function Table 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit. TABLE 3-1: Product Summary 4.0 Packaging Information 4.1 Package Marking Information
LND01 Lateral N-Channel Depletion-Mode MOSFET Features General Description
• Bi-directional The LND01 is a low-threshold, Depletion-mode • Low On-resistance (normally-on) transistor that uses an advanced lateral • Low Input Capacitance DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a • Fast Switching Speeds device with the power handling capabilities of bipolar • High Input Impedance and High Gain transistors as well as the high input impedance and • Low Power Drive Requirement positive temperature coefficient inherent in • Ease of Paralleling MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally
Applications
induced secondary breakdown. The body of the transistor is connected to the gate pin. • Normally-on Switches The channel is therefore being pinched off by both the • Solid-state Relays gate and body. The gate pin has a diode connected to • Converters the drain terminal and another diode connected to the • Constant Current Sources source terminal. • Analog Switches
Package Type 5-lead SOT-23 DRAIN SOURCE N/C GATE N/C
See Table 2-1 for pin information. 2017 Microchip Technology Inc. DS20005696A-page 1 Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Function Table 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit. TABLE 3-1: Product Summary 4.0 Packaging Information 4.1 Package Marking Information
