Datasheet LND01 (Microchip) - 2

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LND01 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings†
Drain-to-source Voltage ... BVDSX Source-to-drain Voltage.. BVSDX Gate-to-source Voltage .. –12V to +0.6V Gate-to-drain Voltage ... –12V to +0.6V Operating Ambient Temperature, TA ... –25°C to +125°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS Electrical Specifications
: TA = 25°C unless otherwise specified. (
Note 1
)
Parameter Sym. Min. Typ. Max. Unit Conditions
Drain-to-source Breakdown Voltage BVDSX 9 — — V VGS = –3V, IDS = 10 µA Source-to-drain Breakdown Voltage BVSDX 9 — — V VGD = –3V, ISD = 10 µA Gate-to-source Off Voltage VGS(OFF) –0.8 — –3 V VDS = 9V, IDS = 1 µA Source-to-gate Off Voltage VSG(OFF) –0.8 — –3 V VSD = 9V, ISD = 1 µA Gate-to-source Diode VGS –12 — 0.6 V IGS = ±1 µA Gate-to-drain Diode VGD –12 — 0.6 V IGD = ±1 µA Drain-to-source Leakage Current IDS(OFF) — — 1 µA VGS = –3V, VDS = 9V Source-to-drain Leakage Current ISD(OFF) — — 1 µA VGD = –3V, VSD = 9V Saturated Drain-to-source Current IDSS 300 — — mA VGS = 0V, VDS = 9V Saturated Source-to-drain Current ISDD 300 — — mA VGD = 0V, VSD = 9V Static Drain-to-source On-state R Resistance DS(ON) — 0.9 1.4 Ω VGS = 0V, IDS = 100 mA Static Source-to-drain On-state R Resistance SD(ON) — 0.9 1.4 Ω VGD = 0V, ISD = 100 mA
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated.  (Pulse test: 300 µs pulse, 2% duty cycle)
2:
Specification is obtained by characterization and is not 100% tested.
AC ELECTRICAL CHARACTERISTICS Electrical Specifications
: TA = 25°C unless otherwise specified. (
Note 2
)
Parameter Sym. Min. Typ. Max. Unit Conditions
Forward Transconductance GFS 200 — — mmho VDS = 9V, IDS = 50 mA Input Capacitance CISS — 46 — pF VGS = –3V, VDS = 5V,  Common Source Output Capacitance COSS — 32 — pF f = 1 MHz Reverse Transfer Capacitance CRSS — 23 — pF Turn-on Delay Time td(ON) — 3.8 — ns Rise Time tr — 11 — ns VDD = 9V, IDS = 100 mA, Turn-off Delay Time t R d(OFF) — 1 — ns GEN = 25Ω Fall Time tf — 6.4 — ns
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated.  (Pulse test: 300 µs pulse, 2% duty cycle)
2:
Specification is obtained by characterization and is not 100% tested. DS20005696A-page 2  2017 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Pin Description TABLE 2-1: Pin Function Table 3.0 Functional Description FIGURE 3-1: Switching Waveforms and Test Circuit. TABLE 3-1: Product Summary 4.0 Packaging Information 4.1 Package Marking Information