Datasheet EL817 (Everlight) - 3
| Manufacturer | Everlight |
| Description | 4 Pin DIP Phototransistor Photocoupler |
| Pages / Page | 13 / 3 — Electro-Optical Characteristics (Ta=25. unless specified otherwise). … |
| File Format / Size | PDF / 846 Kb |
| Document Language | English |
Electro-Optical Characteristics (Ta=25. unless specified otherwise). Transfer Characteristics
Text Version of Document
DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 Series
Electro-Optical Characteristics (Ta=25
℃
unless specified otherwise)
Input Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF - 1.2 1.4 V IF = 20mA Reverse Current IR - - 10 µA VR = 4V Input capacitance Cin - 30 250 pF V = 0, f = 1kHz Output Parameter Symbol Min Typ. Max. Unit Condition Collector-Emitter dark ICEO - - 100 nA VCE = 20V, IF = 0mA current Collector-Emitter BVCEO 35 - - V IC = 0.1mA breakdown voltage Emitter-Collector BVECO 6 - - V IE = 0.1mA breakdown voltage
Transfer Characteristics
Parameter Symbol Min Typ. Max. Unit Condition EL817 50 - 600 EL817A 80 - 160 EL817B 130 Current - 260 Transfer EL817C CTR 200 - 400 % IF = 5mA ,VCE = 5V ratio EL817D 300 - 600 EL817X 100 - 200 EL817Y 150 - 300 Collector-Emitter V saturation voltage CE(sat) - 0.1 0.2 V IF = 20mA ,IC = 1mA V Isolation resistance R IO = 500Vdc, IO 5×1010 - - 40~60% R.H. Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz V Cut-off frequency fc - 80 - kHz CE = 5V, IC = 2mA RL = 100, -3dB Rise time tr - - 18 µs VCE = 2V, IC = 2mA, RL = 100 Fall time tf - - 18 µs * Typical values at Ta = 25°C 3 Copyright © 2010, Everlight All Rights Reserved. Release Date : Nov 1, 2016. Issue No: DPC-0000046 Rev.16 www.everlight.com
Electro-Optical Characteristics (Ta=25
℃
unless specified otherwise)
Input Parameter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF - 1.2 1.4 V IF = 20mA Reverse Current IR - - 10 µA VR = 4V Input capacitance Cin - 30 250 pF V = 0, f = 1kHz Output Parameter Symbol Min Typ. Max. Unit Condition Collector-Emitter dark ICEO - - 100 nA VCE = 20V, IF = 0mA current Collector-Emitter BVCEO 35 - - V IC = 0.1mA breakdown voltage Emitter-Collector BVECO 6 - - V IE = 0.1mA breakdown voltage
Transfer Characteristics
Parameter Symbol Min Typ. Max. Unit Condition EL817 50 - 600 EL817A 80 - 160 EL817B 130 Current - 260 Transfer EL817C CTR 200 - 400 % IF = 5mA ,VCE = 5V ratio EL817D 300 - 600 EL817X 100 - 200 EL817Y 150 - 300 Collector-Emitter V saturation voltage CE(sat) - 0.1 0.2 V IF = 20mA ,IC = 1mA V Isolation resistance R IO = 500Vdc, IO 5×1010 - - 40~60% R.H. Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz V Cut-off frequency fc - 80 - kHz CE = 5V, IC = 2mA RL = 100, -3dB Rise time tr - - 18 µs VCE = 2V, IC = 2mA, RL = 100 Fall time tf - - 18 µs * Typical values at Ta = 25°C 3 Copyright © 2010, Everlight All Rights Reserved. Release Date : Nov 1, 2016. Issue No: DPC-0000046 Rev.16 www.everlight.com
