Datasheet LT8612 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | 42V, 6A Synchronous Step-Down Regulator with 3μA Quiescent Current |
| Pages / Page | 22 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply … |
| File Format / Size | PDF / 365 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating
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LT8612
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS
INTVCC Voltage ILOAD = 0mA, VBIAS = 0V 3.23 3.4 3.57 V ILOAD = 0mA, VBIAS = 3.3V 3.25 3.29 3.35 V INTVCC Undervoltage Lockout 2.4 2.6 2.8 V BIAS Pin Current Consumption VBIAS = 3.3V, ILOAD = 2A, 2MHz 14 mA Minimum On-Time ILOAD = 2A, SYNC = 0V l 20 40 60 ns ILOAD = 2A, SYNC = 3.3V l 20 35 55 ns Minimum Off-Time 50 85 120 ns Oscillator Frequency RT = 221k, ILOAD = 1.5A l 180 210 240 kHz RT = 60.4k, ILOAD = 1.5A l 665 700 735 kHz RT = 18.2k, ILOAD = 1.5A l 1.85 2.00 2.15 MHz Top Power NMOS On-Resistance ISW = 1A 65 mΩ Top Power NMOS Current Limit l 7.5 9.7 12.0 A Bottom Power NMOS On-Resistance VINTVCC = 3.4V, ISW = 1A 29 mΩ Bottom Power NMOS Current Limit VINTVCC = 3.4V l 6 10 12 A SW Leakage Current VIN = 42V, VSW = 0V, 42V –6 0.1 6 µA EN/UV Pin Threshold EN/UV Rising l 0.94 1.0 1.06 V EN/UV Pin Hysteresis 40 mV EN/UV Pin Current VEN/UV = 2V –20 1 20 nA PG Upper Threshold Offset from VFB VFB Falling l 6.5 9.0 11.5 % PG Lower Threshold Offset from VFB VFB Rising l –6.5 –9.0 –11.5 % PG Hysteresis 1.3 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 680 2000 Ω SYNC Threshold SYNC Falling 0.7 1.0 1.4 V SYNC Rising 1.0 1.3 1.55 V SYNC Pin Current VSYNC = 2V –40 40 nA TR/SS Source Current l 1.4 2.1 3.5 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 230 Ω
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
This IC includes overtemperature protection that is intended to may cause permanent damage to the device. Exposure to any Absolute protect the device during overload conditions. Junction temperature will Maximum Rating condition for extended periods may affect device exceed 150°C when overtemperature protection is active. Continuous reliability and lifetime. operation above the specified maximum operating junction temperature
Note 2:
The LT8612E is guaranteed to meet performance specifications will reduce lifetime. from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The LT8612I is guaranteed over the full –40°C to 125°C operating junction temperature range. High junction temperatures degrade operating lifetimes. Operating lifetime is derated at junction temperatures greater than 125°C. 8612fa For more information www.linear.com/LT8612 3 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Block Diagram Operation Applications Information Typical Applications Package Description Typical Application Related Parts
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS
INTVCC Voltage ILOAD = 0mA, VBIAS = 0V 3.23 3.4 3.57 V ILOAD = 0mA, VBIAS = 3.3V 3.25 3.29 3.35 V INTVCC Undervoltage Lockout 2.4 2.6 2.8 V BIAS Pin Current Consumption VBIAS = 3.3V, ILOAD = 2A, 2MHz 14 mA Minimum On-Time ILOAD = 2A, SYNC = 0V l 20 40 60 ns ILOAD = 2A, SYNC = 3.3V l 20 35 55 ns Minimum Off-Time 50 85 120 ns Oscillator Frequency RT = 221k, ILOAD = 1.5A l 180 210 240 kHz RT = 60.4k, ILOAD = 1.5A l 665 700 735 kHz RT = 18.2k, ILOAD = 1.5A l 1.85 2.00 2.15 MHz Top Power NMOS On-Resistance ISW = 1A 65 mΩ Top Power NMOS Current Limit l 7.5 9.7 12.0 A Bottom Power NMOS On-Resistance VINTVCC = 3.4V, ISW = 1A 29 mΩ Bottom Power NMOS Current Limit VINTVCC = 3.4V l 6 10 12 A SW Leakage Current VIN = 42V, VSW = 0V, 42V –6 0.1 6 µA EN/UV Pin Threshold EN/UV Rising l 0.94 1.0 1.06 V EN/UV Pin Hysteresis 40 mV EN/UV Pin Current VEN/UV = 2V –20 1 20 nA PG Upper Threshold Offset from VFB VFB Falling l 6.5 9.0 11.5 % PG Lower Threshold Offset from VFB VFB Rising l –6.5 –9.0 –11.5 % PG Hysteresis 1.3 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 680 2000 Ω SYNC Threshold SYNC Falling 0.7 1.0 1.4 V SYNC Rising 1.0 1.3 1.55 V SYNC Pin Current VSYNC = 2V –40 40 nA TR/SS Source Current l 1.4 2.1 3.5 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 230 Ω
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
This IC includes overtemperature protection that is intended to may cause permanent damage to the device. Exposure to any Absolute protect the device during overload conditions. Junction temperature will Maximum Rating condition for extended periods may affect device exceed 150°C when overtemperature protection is active. Continuous reliability and lifetime. operation above the specified maximum operating junction temperature
Note 2:
The LT8612E is guaranteed to meet performance specifications will reduce lifetime. from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The LT8612I is guaranteed over the full –40°C to 125°C operating junction temperature range. High junction temperatures degrade operating lifetimes. Operating lifetime is derated at junction temperatures greater than 125°C. 8612fa For more information www.linear.com/LT8612 3 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Typical Performance Characteristics Block Diagram Operation Applications Information Typical Applications Package Description Typical Application Related Parts
