Datasheet AD5231 (Analog Devices) - 3

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Data Sheet AD5231 SPECIFICATIONS ELECTRICAL CHARACTERISTICS—10 kΩ, 50 kΩ, 100 kΩ VERSIONS
VDD = 3 V ± 10% or 5 V ± 10%, VSS = 0 V, VA = VDD, VB = 0 V, −40°C < TA < +85°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS— RHEOSTAT MODE Resistor Differential Nonlinearity2 R-DNL RWB, VA = NC, monotonic −1 ±1/2 +1.8 LSB Resistor Integral Nonlinearity2 R-INL RWB,VA = NC −0.2 +0.2 LSB Nominal Resistor Tolerance ΔRAB/RAB D = 0x3FF −40 +20 % Resistance Temperature Coefficient (ΔRWB/RWB)/ΔT × 106 600 ppm/°C Wiper Resistance RW IW = 100 µA, VDD = 5.5 V, 15 100 Ω code = half scale IW = 100 µA, VDD = 3 V, 50 Ω code = half scale DC CHARACTERISTICS— POTENTIOMETER DIVIDER MODE Resolution N 10 Bits Differential Nonlinearity3 DNL Monotonic, TA = 25°C −1 ±1/2 +1 LSB Monotonic, TA = −40°C or +85°C −1 +1.25 LSB Integral Nonlinearity3 INL −0.4 +0.4 LSB Voltage Divider Temperature (ΔVW/VW)/ΔT × 106 Code = half scale 15 ppm/°C Coefficient Full-Scale Error VWFSE Code = full scale −3 0 % FS Zero-Scale Error VWZSE Code = zero scale 0 1.5 % FS RESISTOR TERMINALS Terminal Voltage Range4 VA, B, W VSS VDD V Capacitance A, B5 CA, B f = 1 MHz, measured to GND, 50 pF code = half-scale Capacitance W5 CW f = 1 MHz, measured to GND, 50 pF code = half-scale Common-Mode Leakage Current5, 6 ICM VW = VDD/2 0.01 1 µA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH With respect to GND, VDD = 5 V 2.4 V Input Logic Low VIL With respect to GND, VDD = 5 V 0.8 V Input Logic High VIH With respect to GND, VDD = 3 V 2.1 V Input Logic Low VIL With respect to GND, VDD = 3 V 0.6 V Input Logic High VIH With respect to GND, VDD = +2.5 V, 2.0 V VSS = −2.5 V Input Logic Low VIL With respect to GND, VDD = +2.5 V, 0.5 V VSS = −2.5 V Output Logic High (SDO, RDY) VOH RPULL-UP = 2.2 kΩ to 5 V 4.9 V (see Figure 26) Output Logic Low VOL IOL = 1.6 mA, VLOGIC = 5 V 0.4 V (see Figure 26) Input Current IIL VIN = 0 V or VDD ±2.5 µA Input Capacitance5 CIL 4 pF Output Current5 IO1, IO2 VDD = 5 V, VSS = 0 V, TA = 25°C 50 mA VDD = 2.5 V, VSS = 0 V, TA = 25°C 7 mA Rev. D | Page 3 of 28 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions Timing Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions Timing Diagrams Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Test Circuits Theory of Operation Scratchpad and EEMEM Programming Basic Operation EEMEM Protection Digital Input/Output Configuration Serial Data Interface Daisy-Chain Operation Terminal Voltage Operation Range Power-Up Sequence Latched Digital Outputs Advanced Control Modes Linear Increment and Decrement Instructions Logarithmic Taper Mode Adjustment Using Additional Internal Nonvolatile EEMEM RDAC Structure Programming the Variable Resistor Rheostat Operation Programming the Potentiometer Divider Voltage Output Operation Programming Examples Flash/EEMEM Reliability Applications Bipolar Operation from Dual Supplies High Voltage Operation Bipolar Programmable Gain Amplifier 10-Bit Bipolar DAC 10-Bit Unipolar DAC Programmable Voltage Source with Boosted Output Programmable Current Source Programmable Bidirectional Current Source Resistance Scaling RDAC Circuit Simulation Model Outline Dimensions Ordering Guide