Datasheet 2N7000, 2N7002, NDS7002A (ON Semiconductor) - 6
| Manufacturer | ON Semiconductor |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Pages / Page | 8 / 6 — 2N7000 / 2N7002 / NDS7002A — N-Chan. Typical Performance Characteristics. … |
| Revision | 3 |
| File Format / Size | PDF / 775 Kb |
| Document Language | English |
2N7000 / 2N7002 / NDS7002A — N-Chan. Typical Performance Characteristics. 2N7000 / 2N7002 / NDS7002A
Model Line for this Datasheet
Text Version of Document
2N7000 / 2N7002 / NDS7002A — N-Chan Typical Performance Characteristics
(Continued)
2N7000 / 2N7002 / NDS7002A
1.1 2 V GS 9 I = 250µA 1 1.075 D 0 .5 1.05 J T = 1 2 5 ° C 1.025 0 .1 2 5 ° C 0 .0 5 -5 5 ° C 1 NORMALIZED 0.975 '66 0 .0 1 BV 0 .0 0 5 0.95 DRAIN-SOURCE BREAKDOWN VOLTAGE 0.925 S I , REVERSE DRAIN CURRENT (A) -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 .0 0 1 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 T , JUNCTION TEM PERATURE (°C) J V , BODY DIODE FORW A RD VOLTAGE (V) SD
Figure 7. Breakdown Voltage Variation Figure 8. Body Diode Forward Voltage Variation with with Temperature nel Enh
6 0 1 0 V DS = 2 5 V 4 0 C iss 8 2 0
a
C
ncement Mode Field Effect T
oss 6 1 0 I = 5 0 0 m A D 5 4 C rss E-SOURCE VOLTAGE (V) CAPACITANCE (pF) f = 1 M H z , GA 2 2 2 8 0 m A 0 .8 GS 1 .2 GS V = 0V V g Q , *ATE CHARGE (nC) 1 1 5 m A 1 0 1 2 3 5 1 0 2 0 3 0 5 0 0 0 .4 0 . 1 .6 2 V , DRAIN TO SOURCE VOLTAGE (V) DS
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
VDD t on toff t t d(on) tr d(off) t f
r
90% 90%
ansisto
R VIN L D V OUT Output, Vout 10% 10% VGS Inverted
r
R 90% GEN G DUT Input, Vin 50% 50% 10% S Pulse Width
Figure 11.6ZLWFKLQJ7HVW&LUFXLW Figure 12. Switching Waveforms
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(Continued)
2N7000 / 2N7002 / NDS7002A
1.1 2 V GS 9 I = 250µA 1 1.075 D 0 .5 1.05 J T = 1 2 5 ° C 1.025 0 .1 2 5 ° C 0 .0 5 -5 5 ° C 1 NORMALIZED 0.975 '66 0 .0 1 BV 0 .0 0 5 0.95 DRAIN-SOURCE BREAKDOWN VOLTAGE 0.925 S I , REVERSE DRAIN CURRENT (A) -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 .0 0 1 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 T , JUNCTION TEM PERATURE (°C) J V , BODY DIODE FORW A RD VOLTAGE (V) SD
Figure 7. Breakdown Voltage Variation Figure 8. Body Diode Forward Voltage Variation with with Temperature nel Enh
6 0 1 0 V DS = 2 5 V 4 0 C iss 8 2 0
a
C
ncement Mode Field Effect T
oss 6 1 0 I = 5 0 0 m A D 5 4 C rss E-SOURCE VOLTAGE (V) CAPACITANCE (pF) f = 1 M H z , GA 2 2 2 8 0 m A 0 .8 GS 1 .2 GS V = 0V V g Q , *ATE CHARGE (nC) 1 1 5 m A 1 0 1 2 3 5 1 0 2 0 3 0 5 0 0 0 .4 0 . 1 .6 2 V , DRAIN TO SOURCE VOLTAGE (V) DS
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
VDD t on toff t t d(on) tr d(off) t f
r
90% 90%
ansisto
R VIN L D V OUT Output, Vout 10% 10% VGS Inverted
r
R 90% GEN G DUT Input, Vin 50% 50% 10% S Pulse Width
Figure 11.6ZLWFKLQJ7HVW&LUFXLW Figure 12. Switching Waveforms
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