Datasheet IRL3705N (International Rectifier) - 5

ManufacturerInternational Rectifier
DescriptionHEXFET Power MOSFET
Pages / Page8 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11
File Format / SizePDF / 109 Kb
Document LanguageEnglish

Fig 10a. Fig 9. Fig 10b. Fig 11

Fig 10a Fig 9 Fig 10b Fig 11

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IRL3705N 100 RD V LIMITED BY PACKAGE DS VGS 80 D.U.T. RG + -VDD 60 5.0V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 I , Drain Current (A) D
Fig 10a.
Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 10% V
Fig 9.
Maximum Drain Current Vs. GS td(on) tr td(off) tf Case Temperature
Fig 10b.
Switching Time Waveforms 1 D = 0.50 thJC (Z ) 0.20 0.10 0.1 0.05 PDM t 0.02 1 SINGLE PULSE 0.01 (THERMAL RESPONSE) t2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case