Datasheet IRL3705N (International Rectifier) - 6
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 8 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| File Format / Size | PDF / 109 Kb |
| Document Language | English |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
Model Line for this Datasheet
Text Version of Document
IRL3705N 800 ) J ID m TO P 1 9A ( y 33A 15 V g BO TTOM 46 A ner 600 E he L D R IV E R V D S lanc a v 400 R G D .U .T + e A V ls - D D u IA S A P 10V le t 0 .0 1 Ω p g 200 in S
Fig 12a.
Unclamped Inductive Test Circuit , AS E V = 2 5V D D 0 A 25 50 75 100 125 150 175 Startin g J T , Jun ctio n T emp era tu re (°C) V(BR )D SS tp
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator
Fig 12b.
Unclamped Inductive Waveforms Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF 5.0 V +V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 12a.
Unclamped Inductive Test Circuit , AS E V = 2 5V D D 0 A 25 50 75 100 125 150 175 Startin g J T , Jun ctio n T emp era tu re (°C) V(BR )D SS tp
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator
Fig 12b.
Unclamped Inductive Waveforms Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF 5.0 V +V D.U.T. DS Q - GS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
