Datasheet 2N5210 (NTE Electronics)
| Manufacturer | NTE Electronics |
| Description | Silicon NPN Transistor Audio Amplifier, Switch TO−92 Type Package |
| Pages / Page | 2 / 1 — 2N5210. Silicon NPN Transistor. Audio Amplifier, Switch. TO−92 Type … |
| File Format / Size | PDF / 64 Kb |
| Document Language | English |
2N5210. Silicon NPN Transistor. Audio Amplifier, Switch. TO−92 Type Package. Absolute Maximum Ratings:
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2N5210 Silicon NPN Transistor Audio Amplifier, Switch TO−92 Type Package Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . 50V Collector−Base Voltage, VCBO . 50V Emitter−Base Voltage, VEBO . 4V Continuous Collector Current, IC . 50mA Total Device Dissipation (TA = +25C), PD . 625mW Derate Above 25C . 5.0mW/C Total Device Dissipation (TC = +25C), PD . 1.5W Derate Above 25C . 12mW/C Operating Junction Temperature Range, TJ . −55 to +150C Storage Temperature Range, Tstg . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . 200C/W
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 50 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 50 − − V Collector Cutoff Current ICBO VCB = 35V, IE = 0 − − 50 nA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 50 nA
ON Characteristics
DC Current Gain hFE VCE = 5V, IC = 100A 200 − 600 VCE = 5V, IC = 1mA 250 − − VCE = 5V, IC = 10mA, Note 1 250 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA − − 0.7 V Base−Emitter ON Voltage VBE(on) IC = 1mA, VCE = 5V − − 0.85 V Note 1. Pulse Test: Pulse Width 300s, Duty Cycle = 2%.
Collector−Emitter Voltage, VCEO . 50V Collector−Base Voltage, VCBO . 50V Emitter−Base Voltage, VEBO . 4V Continuous Collector Current, IC . 50mA Total Device Dissipation (TA = +25C), PD . 625mW Derate Above 25C . 5.0mW/C Total Device Dissipation (TC = +25C), PD . 1.5W Derate Above 25C . 12mW/C Operating Junction Temperature Range, TJ . −55 to +150C Storage Temperature Range, Tstg . −55 to +150C Thermal Resistance, Junction−to−Case, RthJC . 83.3C/W Thermal Resistance, Junction−to−Ambient, RthJA . 200C/W
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 50 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 50 − − V Collector Cutoff Current ICBO VCB = 35V, IE = 0 − − 50 nA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 50 nA
ON Characteristics
DC Current Gain hFE VCE = 5V, IC = 100A 200 − 600 VCE = 5V, IC = 1mA 250 − − VCE = 5V, IC = 10mA, Note 1 250 − − Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA − − 0.7 V Base−Emitter ON Voltage VBE(on) IC = 1mA, VCE = 5V − − 0.85 V Note 1. Pulse Test: Pulse Width 300s, Duty Cycle = 2%.
