DatasheetPZT3904T1G (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | NPN Bipolar Transistor |
| Pages / Page | 7 / 1 — NPN Silicon. Features. http://onsemi.com. MAXIMUM RATINGS. Rating. … |
| Revision | 6 |
| File Format / Size | PDF / 146 Kb |
| Document Language | English |
NPN Silicon. Features. http://onsemi.com. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. SOT−223. CASE 318E. STYLE 1. MARKING DIAGRAM
Model Line for this Datasheet
Text Version of Document
link to page 1 link to page 1 PZT3904T1G General Purpose Transistor
NPN Silicon Features
• S Prefix for Automotive and Other Applications Requiring Unique
http://onsemi.com
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2, 4 Compliant 1 BASE
MAXIMUM RATINGS Rating Symbol Value Unit
3 Collector − Emitter Voltage V EMITTER CEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc 4 Emitter − Base Voltage VEBO 6.0 Vdc 1 2 Collector Current − Continuous IC 200 mAdc 3 Stresses exceeding Maximum Ratings may damage the device. Maximum
SOT−223
Ratings are stress ratings only. Functional operation above the Recommended
CASE 318E
Operating Conditions is not implied. Extended exposure to stresses above the
STYLE 1
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Device Dissipation (Note 1) PD 1.5 W T AYW A = 25°C 12 mW/°C 1AM G Thermal Resistance RqJA °C/W G Junction−to−Ambient (Note 1) 83.3 1 Thermal Resistance RqJA °C/W Junction−to−Lead #4 35 Junction and Storage Temperature TJ, Tstg − 55 to +150 °C 1AM = Specific Device Code Range A = Assembly Location Y = Year 1. FR− 4 with 1 oz and 713 mm2 of copper area. W = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION Device Package Shipping
† PZT3904T1G SOT−223 1,000 / Tape & Reel (Pb−Free) SPZT3904T1G SOT−223 1,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 6 PZT3904T1/D
NPN Silicon Features
• S Prefix for Automotive and Other Applications Requiring Unique
http://onsemi.com
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2, 4 Compliant 1 BASE
MAXIMUM RATINGS Rating Symbol Value Unit
3 Collector − Emitter Voltage V EMITTER CEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc 4 Emitter − Base Voltage VEBO 6.0 Vdc 1 2 Collector Current − Continuous IC 200 mAdc 3 Stresses exceeding Maximum Ratings may damage the device. Maximum
SOT−223
Ratings are stress ratings only. Functional operation above the Recommended
CASE 318E
Operating Conditions is not implied. Extended exposure to stresses above the
STYLE 1
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Device Dissipation (Note 1) PD 1.5 W T AYW A = 25°C 12 mW/°C 1AM G Thermal Resistance RqJA °C/W G Junction−to−Ambient (Note 1) 83.3 1 Thermal Resistance RqJA °C/W Junction−to−Lead #4 35 Junction and Storage Temperature TJ, Tstg − 55 to +150 °C 1AM = Specific Device Code Range A = Assembly Location Y = Year 1. FR− 4 with 1 oz and 713 mm2 of copper area. W = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION Device Package Shipping
† PZT3904T1G SOT−223 1,000 / Tape & Reel (Pb−Free) SPZT3904T1G SOT−223 1,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 6 PZT3904T1/D
